NTGS3441T1G

NTGS3441, NVGS3441
http://onsemi.com
4
88124016
1200
900
600
4
300
0
20
GATETOSOURCE OR DRAINTOSOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
04
8
26
6
4
2
0
8
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
50 50
0.8
0 100
1.2
1
0.6
150
Figure 9. Gate Threshold Voltage Variation
with Temperature
T
J,
JUNCTION TEMPERATURE (°C)
V
GS(th),
GATE THRESHOLD VOLTAGE
(NORMALIZED)
V
GS,
GATETOSOURCE VOLTAGE
(VOLTS)
0.5 0.9
10
10.80.7 1.1
8
6
4
2
0.6
0
1.2 1.3 1.4
Figure 10. Diode Forward Voltage vs. Current
V
SD,
SOURCETODRAIN VOLTAGE (VOLTS)
I
S,
SOURCE CURRENT (AMPS)
T
J
= 25°CV
DS
= 0 V V
GS
= 0 V
C
iss
C
rss
C
oss
C
iss
C
rss
V
DD
= 20 V
I
D
= 3.3 A
T
J
= 25°C
I
D
= 250 mA
0.9
1.3
1.1
0.7
2525 75 125
V
GS
= 0 V
T
J
= 25°C
QT
Q
gd
Q
gs
V
GS
V
DS
TYPICAL ELECTRICAL CHARACTERISTICS
NTGS3441, NVGS3441
http://onsemi.com
5
0.01 1.000.10 10.00
20
16
12
8
4
0
100.00
Figure 11. Single Pulse Power
TIME (sec)
POWER (W)
TYPICAL ELECTRICAL CHARACTERISTICS
1E04 1E+00
0.01
1E+011E011E02
SQUARE WAVE PULSE DURATION (sec)
0.1
1
1E03
Figure 12. Normalized Thermal Transient Impedance, JunctiontoAmbient
Duty Cycle = 0.5
1E+02 1E+03
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
0.2
Single Pulse
0.1
0.05
0.02
0.01
NTGS3441, NVGS3441
http://onsemi.com
6
PACKAGE DIMENSIONS
TSOP6
CASE 318G02
ISSUE V
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
23
456
D
1
e
b
E1
A1
A
0.05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
c
DIM
A
MIN NOM MAX
MILLIMETERS
0.90 1.00 1.10
A1 0.01 0.06 0.10
b 0.25 0.38 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
E 2.50 2.75 3.00
e 0.85 0.95 1.05
L 0.20 0.40 0.60
0.25 BSC
L2
0° 10°
1.30 1.50 1.70
E1
E
NOTE 5
L
C
M
H
L2
SEATING
PLANE
GAUGE
PLANE
DETAIL Z
DETAIL Z
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
RECOMMENDED
0.60
6X
3.20
0.95
6X
0.95
PITCH
DIMENSIONS: MILLIMETERS
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NTGS3441T1/D
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NTGS3441T1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 1A P-Channel
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New from this manufacturer.
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