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BFU580GX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014 Product data sheet
6
2
7
Table 1. Quick reference data
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - 30 60 mA
P
tot
total power dissipation T
sp
120 C
[1]
- - 1000 mW
h
FE
DC current gain I
C
=30mA; V
CE
=8V 60 95 130
C
c
collector capacitance V
CB
=8V; f=1MHz - 1.1 - pF
f
T
transition frequency I
C
=30mA; V
CE
= 8 V; f = 900 MHz - 11 - GHz
BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 2 of 21
NXP Semiconductors
BFU580G
NPN wideband silicon RF transistor
[1] T
sp
is the temperature at the solder point of the collector lead.
[2] If K > 1 then G
p(max)
is the maximum power gain. If K 1 then G
p(max)
=MSG.
2. Pinning information
3. Ordering information
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580G and BFU590G samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
G
p(max)
maximum power gain I
C
=30mA; V
CE
= 8 V; f = 900 MHz
[2]
- 15.5 - dB
NF
min
minimum noise figure I
C
=5mA; V
CE
= 8 V; f = 900 MHz;
S
=
opt
-0.75- dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
=30mA; V
CE
=8V; Z
S
=Z
L
=50;
f=900MHz
-13- dBm
Table 1. Quick reference data
…continued
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector

PEE

Table 3. Ordering information
Type number Package
Name Description Version
BFU580G - plastic surface-mounted package with increased heatsink; 4 leads SOT223
OM7966 - Customer evaluation kit for BFU580G and BFU590G
[1]
-
Table 4. Marking
Type number Marking
BFU580G BFU580
BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 3 of 21
NXP Semiconductors
BFU580G
NPN wideband silicon RF transistor
5. Design support
6. Limiting values
7. Recommended operating conditions
[1] T
sp
is the temperature at the solder point of the collector lead.
Table 5. Available design support
Download from the BFU580G product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Noise parameters yes
Customer evaluation kit yes See Section 3
and Section 10.
Solder pattern yes
Application notes yes See Section 10.1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CB
collector-base voltage open emitter - 30 V
V
CE
collector-emitter voltage open base - 16 V
shorted base - 30 V
V
EB
emitter-base voltage open collector - 3 V
I
C
collector current -100mA
T
stg
storage temperature 65 +150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) According to JEDEC
standard 22-A114E
- 150 V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
- 2kV
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - - 60 mA
P
i
input power Z
S
= 50 --10dBm
T
j
junction temperature 40 - +150 C
P
tot
total power dissipation T
sp
120 C
[1]
--1000mW
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

BFU580GX

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Buy BFU580GX
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN wideband silicon RF transistor
Lifecycle:
New from this manufacturer.
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