BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 18 of 21
NXP Semiconductors
BFU580G
NPN wideband silicon RF transistor
12. Handling information
13. Abbreviations
14. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviations
Acronym Description
AEC Automotive Electronics Council
FM Frequency Modulation
ISM Industrial, Scientific and Medical
LNA Low-Noise Amplifier
MSG Maximum Stable Gain
NPN Negative-Positive-Negative
SMA SubMiniature version A
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU580G v.1 20140428 Product data sheet - -