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MRF6S21190HSR3

P1-P3P4-P6P7-P9P10-P11
MRF6S21190HR3 MRF6S21190HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - P C S / c ellu l a r r a dio a n d W L L
applications.
• Typical Single -Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1600 mA, P
out
= 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 29%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate- Source Voltage V
GS
-0.5, +12 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
CW Operation @ T
C
= 25°C
Derate above 25°C
CW 175
1
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
R
θ
JC
0.29
0.30
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S21190HR3
MRF6S21190HSR3
2110-2170 MHz, 54 W AVG., 28 V
SINGLE W-CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI- 880S
MRF6S21190HSR3
CASE 465B-03, STYLE 1
NI- 880
MRF6S21190HR3
Document Number: MRF6S21190H
Rev. 1, 3/2008
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1B (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 420 µAdc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.8 4 Vdc
Drain- Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 4.2 Adc)
V
DS(on)
0.12 0.21 0.31 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.8 — pF
Output Equivalent Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
out
— 185 — pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 526 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single -Carrier W- CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain G
ps
14.5 16 17.5 dB
Drain Efficiency η
D
26 29 — %
Output Peak -to -Average Ratio @ 0.01% Probability on CCDF PAR 5.5 6.1 — dB
Adjacent Channel Power Ratio ACPR — -38 -35 dBc
Input Return Loss IRL — -13 -8 dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, 2110-2170 MHz Bandwidth
Video Bandwidth @ 175 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
— 50 —
MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
= 54 W Avg. G
F
— 0.16 — dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 175 W CW
Φ — 0.52 — °
Average Group Delay @ P
out
= 175 W CW, f = 2140 MHz Delay — 2.1 — ns
Part-to -Part Insertion Phase Variation @ P
out
= 175 W CW,
f = 2140 MHz
∆Φ — 28 — °
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.016 — dB/°C
1. Part internally matched both on input and output.
MRF6S21190HR3 MRF6S21190HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic
Z9 0.145″ x 1.320″ Microstrip
Z10 0.508″ x 0.320″ Microstrip
Z11 0.429″ x 0.279″ Microstrip
Z12 0.322″ x 0.084″ Microstrip
Z13 0.735″ x 0.084″ Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, ε
r
= 2.55
Z1 0.744″ x 0.084″ Microstrip
Z2 0.632″ x 0.084″ Microstrip
Z3 0.400″ x 0.450″ Microstrip
Z4 0.042″ x 0.580″ Microstrip
Z5 0.322″ x 0.580″ Microstrip
Z6 0.313″ x 0.040″ Microstrip
Z7, Z8 0.123″ x 0.121″ Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
Z1 Z2 Z3
C1
Z4 Z5
R1
C4
Z9 Z11 Z12
Z13
C2
Z6
C3C7
Z7
C10
Z10
Z8
C13
+
C12
+
C8
+
B1
R2
C6
C11
+
C9
C5 C15
C18
+
C17
+
C16
+
C14
V
SUPPLY
Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short Ferrite Bead 2743019447 Fairrite
C1, C4, C5 8.2 pF Chip Capacitors ATC100B8R2JT500XT ATC
C2 47 pF Chip Capacitor ATC100B470JT500XT ATC
C3 10 pF Chip Capacitor ATC100B100JT500XT ATC
C6 56 pF Chip Capacitor ATC100B560JT500XT ATC
C7, C9, C14 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet
C8 10 µF, 50 V Electrolytic Capacitor EMVY500ADA100MF55G Nippon Chemi- Con
C10, C15 10 µF Chip Capacitors GRM55DR61H106KA88 Murata
C11, C12, C16, C17 22 µF Tantalum Capacitors T491X226K035AT Kemet
C13, C18 220 µF, 50 V Electrolytic Capacitors EMVY500ADA221MJA0G Nippon Chemi-Con
R1 1.0 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
P1-P3P4-P6P7-P9P10-P11

MRF6S21190HSR3

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Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
Lifecycle:
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