MRF6S21190HR3 MRF6S21190HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
22202060
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to - Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 54 Watts Avg.
216021202100
13.5
18.5
18
17.5
17
−2.5
34
32
30
28
0
−1
−1.5
−2
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
−24
−4
−8
−16
−20
η
D
, DRAIN
EFFICIENCY (%)
2140
2080 22002180
G
ps
, POWER GAIN (dB)
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to - Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 86 Watts Avg.
12.5
17
16.5
16
15.5
15
14.5
14
13.5
−4
42
38
36
34
−2
−2.5
−3
−3.5
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
−25
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
13
18
1
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
17
16
10 200
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−20
P
out
, OUTPUT POWER (WATTS) PEP
10
−30
−40
100
−60
−50
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
200
I
DQ
= 2400 mA
2000 mA
I
DQ
= 800 mA
2000 mA
2400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
V
DD
= 28 Vdc, P
out
= 86 W (Avg.), I
DQ
= 1600 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
15
1600 mA
1200 mA
800 mA
1200 mA
1600 mA
14
14.5
15
15.5
16
16.5
−0.5
26
V
DD
= 28 Vdc, P
out
= 54 W (Avg.), I
DQ
= 1600 mA
−12
22202060 216021202100
2140
2080 22002180
13
40
14
η
D
η
D
