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74ALVC162334ADGG:1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
74ALVC162334A_3 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 13 December 2006 6 of 19
NXP Semiconductors
74ALVC162334A
16-bit registered driver (3-state)
7. Functional description
Refer to Figure 1 “Logic symbol (IEEE/IEC)” and Figure 2 “Logic diagram”.
7.1 Function selection
[1] Output level before the indicated steady-state input conditions were established, provided that CP is HIGH
before LE goes LOW.
[2] Output level before the indicated steady-state input conditions were established.
Table 4. Function selection
H = HIGH voltage level; L = LOW voltage level; X = Don’t care; Z = high-impedance OFF-state;
↑
= LOW to HIGH level transition.
Inputs Outputs
OE LE CP An Yn
HXXXZ
LLXLL
LLXHH
LH↑ LL
LH↑ HH
LHHXY
0
[1]
LHLXY
0
[2]
74ALVC162334A_3 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 13 December 2006 7 of 19
NXP Semiconductors
74ALVC162334A
16-bit registered driver (3-state)
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
9. Recommended operating conditions
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to GND (ground=0V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +4.6 V
I
IK
input clamping current V
I
<0V - −50 mA
V
I
input voltage
[1]
−0.5 +4.6 V
I
OK
output clamping current V
O
>V
CC
or V
O
<0V - ±50 mA
V
O
output voltage
[1]
−0.5 V
CC
+ 0.5 V
I
O(sink/source)
output sink or source current V
O
= 0 V to V
CC
- ±50 mA
I
CC
supply current - ±100 mA
I
GND
ground current - ±100 mA
T
stg
storage temperature −65 +150 °C
P
tot
/pack total power dissipation
per package
for temperature range −40 °C to +125 °C;
above +55 °C derate linearly with 8 mW/K
- 600 mW
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.5 V range for maximum speed performance
at 30 pF output load
2.3 - 2.7 V
3.3 V range for maximum speed performance
at 50 pF output load
3.0 - 3.6 V
for low-voltage applications 1.2 - 3.6 V
V
I
input voltage 0 - V
CC
V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature operating in free-air −40 - +85 °C
t
r
rise time V
CC
= 2.3 V to 3.0 V 0 - 20 ns/V
V
CC
= 3.0 V to 3.6 V 0 - 10 ns/V
t
f
fall time V
CC
= 2.3 V to 3.0 V 0 - 20 ns/V
V
CC
= 3.0 V to 3.6 V 0 - 10 ns/V
74ALVC162334A_3 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 13 December 2006 8 of 19
NXP Semiconductors
74ALVC162334A
16-bit registered driver (3-state)
10. Static characteristics
[1] All typical values are at T
amb
=25°C.
[2] C
PD
is used to determine the dynamic power dissipation (P
D
) in µW.
P
D
=C
PD
× V
CC
2
× f
i
+ Σ (C
L
× V
CC
2
× f
o
), where:
f
i
= input frequency in MHz;
Table 7. Static characteristics
T
amb
=
−
40
°
C to +85
°
C; over recommended operating conditions; voltages are referenced to GND (ground=0V);
unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
IH
HIGH-level input voltage V
CC
= 2.3 V to 2.7 V 1.7 1.2 - V
V
CC
= 2.7 V to 3.6 V 2.0 1.5 - V
V
IL
LOW-level input voltage V
CC
= 2.3 V to 2.7 V - 1.2 0.7 V
V
CC
= 2.7 V to 3.6 V - 1.5 0.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
V
CC
= 2.3 V to 3.6 V; I
O
= −100 µAV
CC
− 0.2 V
CC
-V
V
CC
= 2.3 V; I
O
= −4mA V
CC
− 0.4 V
CC
− 0.11 - V
V
CC
= 2.3 V; I
O
= −6mA V
CC
− 0.6 V
CC
− 0.17 - V
V
CC
= 2.7 V; I
O
= −4mA V
CC
− 0.5 V
CC
− 0.09 - V
V
CC
= 2.7 V; I
O
= −8mA V
CC
− 0.7 V
CC
− 0.19 - V
V
CC
= 3.0 V; I
O
= −6mA V
CC
− 0.6 V
CC
− 0.13 - V
V
CC
= 3.0 V; I
O
= −12 mA V
CC
− 1.0 V
CC
− 0.27 - V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
V
CC
= 2.3 V to 3.6 V; I
O
= 100 µA - GND 0.20 V
V
CC
= 2.3 V; I
O
= 4 mA - 0.07 0.40 V
V
CC
= 2.3 V; I
O
= 6 mA - 0.11 0.55 V
V
CC
= 2.7 V; I
O
= 4 mA - 0.06 0.40 V
V
CC
= 2.7 V; I
O
= 8 mA - 0.13 0.60 V
V
CC
= 3.0 V; I
O
= 6 mA - 0.09 0.55 V
V
CC
= 3.0 V; I
O
= 12 mA - 0.19 0.80 V
I
LI
input leakage current V
CC
= 2.3 V to 3.6 V;
V
I
=V
CC
or GND
- 0.1 5 µA
I
OZ
off-state output current 3-state; V
CC
= 2.3 V to 3.6 V;
V
I
=V
IH
or V
IL
; V
O
=V
CC
or GND
- 0.1 10 µA
I
CC
supply current V
CC
= 2.3 V to 3.6 V;
V
I
=V
CC
or GND; I
O
=0mA
- 0.2 40 µA
∆I
CC
additional supply current V
CC
= 2.3 V to 3.6 V;
V
I
=V
CC
− 0.6 V; I
O
=0mA
- 150 750 µA
C
i
input capacitance - 4.0 - pF
C
io
input/output capacitance - 8.0 - pF
C
PD
power dissipation
capacitance
per buffer; V
I
= GND to V
CC
[2]
transparent mode; output enabled - 10 - pF
transparent mode; output disabled - 3 - pF
clocked mode; output enabled - 21 - pF
clocked mode; output disabled - 15 - pF
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

74ALVC162334ADGG:1

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Latches 16-bit registered drive
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