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NCV8452STT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
NCV8452
www.onsemi.com
10
TYPICAL CHARACTERISTIC CURVES
0 5 10 4015 20 25 30 35
V
D
(V)
Figure 28. Turn−Off Time vs. Supply Voltage
80
t
off
(
m
s)
70
60
50
40
30
20
10
0
R
L
= 24 W
150°C
100°C
−40°C
25°C
0 5 10 4
0
15 20 25 30 35
V
D
(V)
Figure 29. Slew Rate On vs. Supply Voltage
1.6
dV
OUT
/ dt
on
(V/ms)
R
L
= 24 W
25°C
−40°C
100°C
150°C
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 5 10 4015 20 25 30 35
V
D
(V)
Figure 30. Slew Rate Off vs. Supply Voltage
3
−dV
OUT
/ dt
off
(V/
m
s)
R
L
= 24 W
25°C
100°C
150°C
−40°C
−50 −25 0 17
5
15012525 50 10075
T
J
(°C)
Figure 31. Turn−On vs. Junction Temperature
140
t
on
(ms)
V
D
= 13.5 V
V
D
= 5 V
V
D
= 35 V
R
L
= 24 W
120
100
80
60
40
20
0
−50 −25 0 17515012525 50 10075
T
J
(°C)
Figure 32. Turn−Off Time vs. Junction
Temperature
80
t
off
(
m
s)
70
60
50
40
30
20
10
0
R
L
= 24 W
V
D
= 5 V
V
D
= 13.5 V
V
D
= 35 V
T
J
(°C)
Figure 33. Slew Rate On vs. Junction
Temperature
1.6
dV
OUT
/ dt
on
(V/ms)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0 17
5
15012525 50 10075
R
L
= 24 W
V
D
= 35 V
V
D
= 5 V
V
D
= 13.5 V
2.5
2
1.5
1
0.5
0
NCV8452
www.onsemi.com
11
TYPICAL CHARACTERISTIC CURVES
3
−dV
OUT
/ dt
off
(V/ms)
−50 −25 0 17515012525 50 10075
T
J
(°C)
Figure 34. Slew Rate Off vs. Junction
Temperature
2.5
2
1.5
1
0.5
0
R
L
= 24 W
V
D
= 35 V
V
D
= 13.5 V
V
D
= 5 V
1.0
−I
GND
(A)
0 0.2 1.21.00.4 0.80.6
−V
D
(V)
Figure 35. Supply−to−Ground Reverse
Characteristics
0.8
0.6
0.4
0.2
0
25°C
100°C
150°C
−40°C
5.0
−I
OUT
(A)
0 0.2 1.21.00.4 0.80.6
V
OUT
− V
D
(V)
Figure 36. Power FET Body Forward
Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−40°C
25°C
100°C
150°C
I
L
(A)
10 10000100 1000
L (mH)
Figure 37. Single Pulse Maximum Switch Off
Current vs. Load Inductance
10
1
0.1
V
D
= 13.5 V,
R
L
= 0 W
TJ
start
= 25°C
TJ
start
= 150°C
E
AS
(mJ)
10 10000100 1000
L (mH)
Figure 38. Single Pulse Maximum Switch Off
Energy vs. Load Inductance
1000
V
D
= 13.5 V,
R
L
= 0 W
TJ
start
= 25°C
TJ
start
= 150°C
100
10
1
1
SHUTDOWN TIME (ms)
25 4030 35
V
D
(V)
Figure 39. Initial Short−Circuit Shutdown Time
vs. Supply Voltage
1000
0
100
10
1
0.1
5101520
TJ
start
= 25°C
TJ
start
= 150°C
TJ
start
= 100°C
TJ
start
= −40°C
R
L
= 0 W
No heatsink attached
NCV8452
www.onsemi.com
12
SHUTDOWN TIME (ms)
75 175125 150
T
Jstart
(°C)
Figure 40. Initial Short−Circuit Shutdown Time
vs. Starting Junction Temperature
1000
−50
100
10
1
0.1
−25 0 25 50
V
D
= 13.5 V
R
L
= 0 W
No heatsink attached
V
D
= 24 V
V
D
= 34 V
100
140
R
thJA
(°C/W)
0 200 700600300 500400
COPPER HEAT SPREADER AREA (mm
2
)
Figure 41. Junction−to−Ambient Thermal
Resistance vs. Copper Area
120
100
80
60
40
20
0
100
1.0 oz
2.0 oz
Figure 42. Junction−to−Ambient Transient Thermal Impedance (minimum pad size)
PULSE TIME (sec)
Z
(t)JA
(°C/W)
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
1000
100
10
1
0.1
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ORDERING INFORMATION
Device Package Shipping
†
NCV8452STT1G SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8452STT3G SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P9P10-P12P13-P13

NCV8452STT1G

Mfr. #:
Buy NCV8452STT1G
Manufacturer:
ON Semiconductor
Description:
Power Switch ICs - Power Distribution 40V SINGLE CHANNEL HS DRI
Lifecycle:
New from this manufacturer.
Delivery:
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