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NCV8452STT1G
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
NCV8452
www
.onsemi.com
7
TYPICAL CHARACTERISTIC CUR
VES
I
GND(on)
(mA)
V
D
(V)
Figure 1
1. Active Ground Current vs. Supply
V
oltage
2.0
0
5
10
40
15
20
25
30
35
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
IN
= 5 V
−40
°
C
25
°
C
100
°
C
150
°
C
I
GND(on)
(mA)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
−25
0
17
5
150
125
25
50
100
75
T
J
(
°
C)
Figure 12. Active Ground Current vs. Junction
T
emperature
V
D
= 5 V
V
D
= 13.5 V
V
D
= 35 V
V
IN(th)
(V)
T
J
(
°
C)
Figure 13. Input Threshold V
oltage vs.
Junction T
emperature
2.5
2
1.5
1
0.5
0
−50
−25
0
175
150
125
25
50
100
75
T
urn On
T
urn Off
−50
−25
0
17
5
150
125
25
50
100
75
0.3
0.25
0.2
0.15
0.1
0.05
0
V
IN(hyst)
(V)
T
J
(
°
C)
Figure 14. Input Threshold Hysteresis vs.
Junction T
emperature
V
IN
= 5 V
V
D
= 13.5 V
2
0
V
IN(th)
(V)
V
D
(V)
Figure 15. Input Threshold V
oltage vs. Supply
V
oltage
54
0
35
25
20
10
15
1.75
1.5
1.25
1
0.75
0.5
0.25
0
30
T
urn ON
T
urn OFF
NCV8452
www
.onsemi.com
8
TYPICAL CHARACTERISTIC CUR
VES
−50
−25
0
175
150
125
25
50
100
75
5
V
UV
, V
UV(res)
(V)
T
J
(
°
C)
Figure 16. Under V
oltage Shutdown and
Restart vs. Junction T
emperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
V
IN
= 5 V
V
UV(res)
V
UV
−50
−25
0
17
5
150
125
25
50
100
75
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
V
UV(hyst)
(V)
T
J
(
°
C)
Figure 17. Under V
oltage Shutdown Hysteresis
vs. Junction T
emperature
V
IN
= 5 V
−50
−25
0
175
150
125
25
50
100
75
45
V
OV
, V
OV(res)
(V)
T
J
(
°
C)
Figure 18. Over V
oltage Shutdown vs.
Junction T
emperature
40
35
30
25
20
15
10
5
0
V
IN
= 5 V
V
OV(res)
V
OV
−50
−25
0
17
5
150
125
25
50
100
75
1
V
OV(hyst)
(V)
T
J
(
°
C)
Figure 19. Over V
oltage Shutdown Hysteresis
vs. Junction T
emperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
IN
= 5 V
50
V
CLAMP
(V)
V
D
(V)
Figure 20. Output Clamp V
oltage vs. Supply
V
oltage
0
5
10
40
15
20
25
30
35
25
°
C
100
°
C
150
°
C
−40
°
C
V
IN
= 0 V
I
D
= 4 mA
−50
−25
0
17
5
150
125
25
50
100
75
50
V
CLAMP
(V)
T
J
(
°
C)
Figure 21. Output Clamp V
oltage vs. Junction
T
emperature
48
46
44
42
40
V
IN
= 0 V
I
D
= 4 mA
V
D
= 5 V
V
D
= 13.5 V
V
D
= 35 V
48
46
44
42
40
NCV8452
www
.onsemi.com
9
TYPICAL CHARACTERISTIC CUR
VES
450
R
ON
(m
W
)
V
D
(V)
Figure 22. On−state Resistance vs. Supply
V
oltage
0
5
10
40
15
20
25
30
35
25
°
C
100
°
C
150
°
C
−40
°
C
V
IN
= 5 V
I
OUT
= 0.5
A
400
350
300
250
200
150
100
50
0
−50
−25
0
17
5
150
125
25
50
100
75
350
R
ON
(m
W
)
T
J
(
°
C)
Figure 23. On−state Resistance vs. Junction
T
emperature
300
250
200
150
100
50
0
R
ON
(m
W
)
OUTPUT CURRENT (A)
Figure 24. On−state Resistance vs. Output
Current
0
350
300
250
200
150
100
50
0
1.75
1.5
1.25
1
0.75
0.5
0.25
0
5
10
4
0
15
20
25
30
35
V
D
(V)
Figure 25. Current Limit vs. Supply V
oltage
3.0
I
LIM
(A)
V
IN
= 5 V
V
D
= 13.5 V
I
OUT
= 0.5
A
25
°
C
100
°
C
150
°
C
−40
°
C
V
IN
= 5 V
V
D
= 13.5 V
V
IN
= 5 V
V
OUT
= 0 V
−40
°
C
25
°
C
100
°
C
150
°
C
2.5
2.0
1.5
1.0
0.5
0
I
LIM
(A)
T
J
(
°
C)
Figure 26. Current Limit vs. Junction
T
emperature
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
−25
0
175
150
125
25
50
100
75
V
IN
= 5 V
V
OUT
= 0 V
V
D
= 5 V
V
D
= 13.5 V
V
D
= 35 V
0
5
10
4
0
15
20
25
30
35
V
D
(V)
Figure 27. T
urn−On Time vs. Supply V
oltage
140
t
on
(
m
s)
120
100
80
60
40
20
0
R
L
= 24
W
150
°
C
100
°
C
−40
°
C
25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
NCV8452STT1G
Mfr. #:
Buy NCV8452STT1G
Manufacturer:
ON Semiconductor
Description:
Power Switch ICs - Power Distribution 40V SINGLE CHANNEL HS DRI
Lifecycle:
New from this manufacturer.
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