PS2381-1
R08DS0134EJ0200 Rev.2.00 Page 4 of 12
Oct 30, 2015
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 5 mA 1.1 1.4 V
Reverse Current IR VR = 5 V 5
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor
Collector to Emitter
Dark Current
I
CEO IF = 0 mA, VCE = 24 V 100 nA
Coupled
Current Transfer Ratio
(I
C/IF)
*1
CTR I
F = 5 mA, VCE = 5 V 50 100 400 %
IF = 1 mA, VCE = 5 V 10 50
Collector Saturation
Voltage
V
CE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1 kVDC 10
11
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time
*2
tr
V
CC = 5 V, IC = 2 mA, RL =
100
4
s
Fall Time
*2
tf 5
Notes: *1. CTR rank
CTR rank CTR (%) Conditions
W 130 to 260 IF = 5 mA, VCE = 5 V
20 to IF = 1 mA, VCE = 5 V
L 100 to 300 IF = 5 mA, VCE = 5 V
20 to IF = 1 mA, VCE = 5 V
M 50 to 150 IF = 5 mA, VCE = 5 V
10 to IF = 1 mA, VCE = 5 V
N 50 to 400 IF = 5 mA, VCE = 5 V
10 to IF = 1 mA, VCE = 5 V
*2. Test circuit for switching time
V
CC
V
OUT
I
F
R
L
= 100 Ω
50 Ω
Input
Output
In monitor
PW = 100 s
Duty cycle = 1/10
μ
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
PS2381-1
R08DS0134EJ0200 Rev.2.00 Page 5 of 12
Oct 30, 2015
TYPICAL CHARACTERISTICS (T
A
= 25C, unless otherwise specified)
30
25
20
15
10
5
0246810
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0
1.51.41.31.21.11.00.90.80.7
5 mA
2 mA
1 mA
IF = 10 mA
5 mA
2 mA
1 mA
IF = 10 mA
120
100
80
60
40
20
0 25 50 75 100 150125
1.0 mW/°C
115
210
180
150
120
90
60
30
0 25 50 75 100 150125
1.5 mW/°C
115
0 20 40 60 10080
10 000
100 000
0.1
100
1 000
10
1
70 V
80 V
VCE = 24 V
100
10
1
0.1
+100
°
C
+60
°
C
+40
°
C
T
A
= +115
°
C
+25
°
C
0
°
C
–20
°
C
–40
°
C
Ambient Temperature TA (°C)
Diode Power Dissipation PD (mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Forward Voltage VF (V)
Forward Current IF (mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature TA (°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current ICEO (nA)
Collector Saturation Voltage VCE (sat) (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
115
PS2381-1
R08DS0134EJ0200 Rev.2.00 Page 6 of 12
Oct 30, 2015
100
10
1
0.1
1 000
100
10
1
10 100 1 000 10 000
t
r
I
C
= 2 mA, V
CC
= 5 V,
CTR = 220%
1 10 100
t
d
t
s
t
f
I
F
= 5 mA, V
CC
= 5 V,
CTR = 220%
R
L
= 1 kΩ
300 Ω
100 Ω
I
F
= 5 mA,
V
CE
= 5 V
5
0
5
10
15
20
25
0.1 1
10
100 1 000
t
r
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
–50
0 25 50 10075 125
0.01 0.1 1 10 100
V
CE
= 5 V,
n = 3
Normalized to 1.0
at T
A
= 25°C,
I
F
= 1 mA, V
CE
= 5 V
Normalized to 1.0
at T
A
= 25°C,
I
F
= 5 mA, V
CE
= 5 V
t
d
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
400
350
300
250
200
150
100
50
0
t
f
t
s
Sample A
B
C
Ambient Temperature T
A
(°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Ambient Temperature T
A
(°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Load Resistance R
L
(kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
CTR@100%
220%
25
–50
0 25 50 10075 125
CTR@100%
220%
Remark The graphs indicate nominal characteristics.

PS2381-1Y-F3-AX

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
Transistor Output Optocouplers BV = 5000Vr.m.s. -40c + 115c
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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