Characteristics STTH1002C-Y
2/9 Doc ID 17536 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ T
j
(diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.73 x I
F(AV)
+ 0.032 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
Forward rms current
D
2
PA K
20
A
DPAK 10
I
F(AV)
Avarage forward current δ = 0.5
T
c
= 155 °C Per diode 5
A
T
c
= 150 °C Per device 10
T
c
= 135 °C Per diode 8
T
c
= 125 °C Per device 16
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 50 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature range -40 to + 175 °C
Table 3. Thermal parameters
Symbol Parameter Value (max) Unit
R
th(j-c)
Junction to case
Per diode 4.0
°C/WPer device 2.5
R
th(j-c)
Coupling 1.0
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125 °C 3 40
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C I
F
= 5 A 1.1
V
T
j
= 25 °C I
F
= 10 A 1.25
T
j
= 150 °C I
F
= 5 A 0.78 0.89
T
j
= 150 °C I
F
= 10 A 1.05
