Characteristics STTH1002C-Y
4/9 Doc ID 17536 Rev 2
Figure 1. Peak current versus duty cycle
(per diode)
Figure 2. Forward voltage drop versus
forward current
(typical values, per diode)
I (A)
M
0
10
20
30
40
50
60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
δ
=tp/T
tp
I
M
P = 10W
P = 5W
P = 2W
δ
0
10
20
30
40
50
60
70
80
90
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
V (V)
FM
I (A)
FM
T =25°C
j
T =150°C
j
Figure 3. Forward voltage drop versus
forward current
(maximum values, per diode)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
I (A)
FM
0
10
20
30
40
50
60
70
80
90
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
T =150°C
j
T =25°C
j
V (V)
FM
Z/R
th(j-c) th(j-c)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
Figure 5. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
10
100
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Q (nC)
rr
0
20
40
60
80
100
120
140
160
180
200
220
240
10 100 1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j