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STF15N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P15
January 2015
DocID027373 Rev 1
1/15
This is information on a product in full production.
www.st.com
STF15N60M2-EP,
STFI15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP
Power MOSFET in TO-220FP and I²PAKFP packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
R
DS(on)
max.
I
D
STF15N60M2-EP
650 V
0.378 Ω
11 A
STFI15N60M2-EP
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching loss, rendering them suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Order code
Marking
Package
Packaging
STF15N60M2-EP
15N60M2EP
TO-220FP
Tube
STFI15N60M2-EP
I²PAKFP
(TO-281)
TO-220FP
I
2
PAKFP (TO-281)
D(2)
G(1)
S(3)
AM01476v1
Contents
STF15N60M2-EP, STFI15N60M2-EP
2/15
DocID027373 Rev 1
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1 TO-220FP package information ...................................................... 10
4.2 I²PAKFP (TO-281) package information ......................................... 12
5 Revision history ............................................................................ 14
STF15N60M2-EP, STFI15N60M2-EP
Electrical ratings
DocID027373 Rev 1
3/15
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
(1)
Drain current (continuous) at T
C
= 25 °C
11
A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C
7
A
I
DM
(2)
Drain current (pulsed)
44
A
P
TOT
Total dissipation at T
C
= 25 °C
25
W
dv/dt
(3)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s,T
C
= 25 °C)
2500
V
T
stg
Storage temperature
- 55 to
150
°C
T
j
Operating junction temperature
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by safe operating area.
(3)
I
SD
≤ 11 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
(4)
V
DS
≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
5
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
)
2.8
A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
125
mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

STF15N60M2-EP

Mfr. #:
Buy STF15N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220FP package
Lifecycle:
New from this manufacturer.
Delivery:
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