STF15N60M2-EP

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15

Electrical characteristics

STF15N60M2-EP, STFI15N60M2-EP

4/15

DocID027373 Rev 1

2 Electrical characteristics

T

C

= 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage

V

GS

= 0 V, I

D

= 1 mA

600

V

I

DSS

Zero gate voltage drain

current

V

GS

= 0 V, V

DS

= 600 V

1

µA

V

GS

= 0 V, V

DS

= 600 V

T

C

= 125 °C

100

µA

I

GSS

Gate-body leakage current

V

DS

= 0 V, V

GS

= ±25 V

±10

µA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 µA

2

3

4

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 5.5 A

0.340

0.378

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 100 V,f = 1 MHz,

V

GS

= 0 V

-

590

-

pF

C

oss

Output capacitance

-

30

-

pF

C

rss

Reverse transfer

capacitance

-

1.1

-

pF

C

oss eq.

(1)

Equivalent output

capacitance

V

DS

= 0 to 480 V,

V

GS

= 0 V

-

148

-

pF

R

G

Intrinsic gate resistance

f = 1 MHz, I

D

= 0 A

-

7

-

Ω

Q

g

Total gate charge

V

DD

= 480 V, I

D

= 11 A,

V

GS

= 10 V (see Figure

15: "Gate charge test

circuit")

-

17

-

nC

Q

gs

Gate-source charge

-

3.1

-

nC

Q

gd

Gate-drain charge

-

7.3

-

nC

Notes:

(1)

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS.

Table 7: Switching energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

E

(off)

Turn-off energy

(from 90% V

GS

to 0% I

D

)

V

DD

= 400 V, I

D

= 1.5 A

R

G

= 4.7 Ω, V

GS

= 10 V

-

4.7

-

µJ

V

DD

= 400 V, I

D

= 3.5 A

R

G

= 4.7 Ω, V

GS

= 10 V

-

5.2

-

µJ

STF15N60M2-EP, STFI15N60M2-EP

Electrical characteristics

DocID027373 Rev 1

5/15

Table 8: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 300 V, I

D

= 5.5 A

R

G

= 4.7 Ω, V

GS

= 10 V (see

Figure 14: "Switching times

test circuit for resistive load"

and Figure 19: "Switching

time waveform" )

-

11

-

ns

t

r

Rise time

-

10

-

ns

t

d(off)

Turn-off-delay time

-

40

-

ns

t

f

Fall time

-

15

-

ns

Table 9: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

(1)

Source-drain current

-

11

A

I

SDM

(2)

Source-drain current (pulsed)

-

44

A

V

SD

(3)

Forward on voltage

V

GS

= 0 V, I = 11 A

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/µs,

V

DD

= 60 V (see Figure 16: "

Test circuit for inductive load

switching and diode

recovery times" )

-

280

ns

Q

rr

Reverse recovery charge

-

2.7

µC

I

RRM

Reverse recovery current

-

19.5

A

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/µs,

V

DD

= 60 V, T

j

= 150 °C

(see Figure 16: " Test circuit

for inductive load switching

and diode recovery times")

-

400

ns

Q

rr

Reverse recovery charge

-

3.8

µC

I

RRM

Reverse recovery current

-

19

A

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Electrical characteristics

STF15N60M2-EP, STFI15N60M2-EP

6/15

DocID027373 Rev 1

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer characteristics

Figure 6: Normalized gate threshold voltage

vs temperature

Figure 7: Normalized V

(BR)DSS

vs temperature

GIPG200120151046MT

ID

1

0.1

0.1

1

VDS(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

1ms

100µs

0.01

Tj=150°C

Tc=25°C

Single pulse

10ms

100

10

K

10

-4

Tp(s)

10

-3

10

-2

10

-1

10

0

10

-3

10

-2

10

-1

GC20940

GIPG121220141416MT

ID

15

5

0

0

4

VDS(V)

8

(A)

12

6V

VGS=7, 8, 9, 10V

10

20

16

4V

5V

GIPG121220141419MT

ID

20

10

0

0

4

VGS(V)

8

(A)

2

6

5

15

VDS=17V

0.9

0.8

0.7

0.6

-75 -25 T

J

(°C)

1.0

25 75 125

I

D

= 250 µA

1.1

V

GS(th)

(norm)

GIPG181120141615ALS

GIPG191120141457ALS

-75

T

J

(°C)

-25 7525 125

0.88

0.92

0.96

1.04

1.00

1.08

I

D

= 1mA

V

(BR)DSS

(norm)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15

STF15N60M2-EP

Mfr. #:

Buy STF15N60M2-EP

Manufacturer:

STMicroelectronics

Description:

MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Lifecycle:

New from this manufacturer.

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