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IRF8788TRPBF

P1-P3P4-P6P7-P9
IRF8788PbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120
Q
g
, Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 19A
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100μsec
10msec
1msec
IRF8788PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
4
8
12
16
20
24
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τι
(sec)
0.0141064 0.000057
0.0210000 0.000286
0.2184000 0.000375
0.8204000 0.001902
4.7558194 0.004544
0.4648000 0.013931
28.9076170 0.038563
15.1191958 2.069546
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
C
i
=
τ
i
/Ri
τ
a
τ
4
τ
4
R
4
R
4
τ
5
τ
5
R
5
R
5
τ
6
τ
6
R
6
R
6
τ
7
τ
7
R
7
R
7
τ
8
τ
8
R
8
R
8
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250μA
I
D
= 100μA
IRF8788PbF
6 www.irf.com
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 14b. Unclamped Inductive Waveforms
t
p
V
(BR)DSS
I
AS
Fig 14a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
2
3
4
5
6
7
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 19A
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
6.4A
7.4A
BOTTOM
19A
P1-P3P4-P6P7-P9

IRF8788TRPBF

Mfr. #:
Buy IRF8788TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg
Lifecycle:
New from this manufacturer.
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