IRF8788TRPBF Datasheet IRF8788TRPBF, IRF8788PBF | P7-P9

IRF8788PbF

www.irf.com 7

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D =

P. W .

Period

* V

= 5V for Logic Level Devices







• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



Fig 17a. Gate Charge Test Circuit

Vds

Vgs

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 17b. Gate Charge Waveform

VCC

DUT

20K

IRF8788PbF

8 www.irf.com

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

P = DISGNATES LEAD - FREE

EXAMPLE: THIS IS AN IRF7101 (MOS FET )

F7101

XXXX

INTERNATIONAL

LOGO

RECTIFIER

PART NUMBER

LOT CODE

PRODUCT (OPTIONAL)

DAT E CODE (YWW)

Y = LAS T DIGIT OF T HE YEAR

WW = WEEK

A = ASSEMBLY SITE CODE

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MIL L IME T E R SINCH ES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BAS IC

D B

0.25 [.010]

K x 45°

8X L

8X c

0.25 [.010]

CAB

8X b

0.10 [.004]

4312

F OOT P R INT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

8X 1.78

[

.070

]

4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA.

NOT ES :

1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE S HOWN IN MILLIME T ERS [INCHE S ].

5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010].

7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O

A SUBSTRAT E.

MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006].

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF8788PbF

www.irf.com 9

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T

= 25°C, L = 1.25mH, R

= 25Ω, I

= 19A.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 R

is measured at T

of approximately 90°C.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/08

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

P1-P3 P4-P6 P7-P9

IRF8788TRPBF

Mfr. #:

Buy IRF8788TRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg

Lifecycle:

New from this manufacturer.

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IRF8788TRPBF

IRF8788TRPBF

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