BC847BS_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 February 2009 3 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 220 mW
[2]
- 250 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 400 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
T
amb
(°C)
−75 17512525 75−25
006aab419
200
300
100
400
500
P
tot
(mW)
0
(1)
(2)