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GA1A2S100SS

P1-P3P4-P6P7-P9P10-P10
Sheet No.: D1-A00501EN
4
GA1A2S100SS/GA1A2S100LY
■ Detector Shape
■ Absolute Maximum Ratings
*
1 Within 5 s (MAX.), no closer than 1.4 mm from edge.
■ Recommended Operating Conditions
Parameter Symbol Rating Unit
Supply voltage V
CC
-0.3 to +7.0 V
Output current I
O
5mA
Operating temperature Topr -40 to +85°C
Storage temperature Tstg -40 to +85°C
Soldering temperature *1 Tsol 260 °C
Parameter Symbol MIN. MAX. Unit
Operating Supply Voltage V
CC
2.7 3.6 V
Output Voltage V
OUT
0 V
CC
– 1.0 V
Illuminance Range E
V
10 10000 lx
328
Center of light detection
(PDB center)
PDA
center
Detector
chip
NOTE: Unit: µm
328
8888
PDC
center
(Ta = 25°C)
(Ta = 0°C to 70°C)
Sheet No.: D1-A00501EN
5
GA1A2S100SS/GA1A2S100LY
■ Electro-optical Characteristics
*
1 Ev = Illuminance by CIE standard light source A (tungsten lamp).
*
2 Illuminance is white LED.
Parameter Symbol Condition Min. Typ. Max. Unit
Supply current I
CC
E
V
= 1000 lx 325 500 675 µA
Output current *1
I
O
1E
V
= 1000 lx 312 480648µA
I
O
2E
V
= 100 lx 31.2 48 64.8µA
I
O
3E
V
= 10 lx 3.12 4.8 6.48µA
I
O
4E
V
= 0 lx — — 1 µA
Output current
temperature coefficient *2
E
V
= 1000 lx
Ta = -20°C to +60°C
-10 — +10 %
Peak sensitivity λ
P
—555 — nm
Rise time (10% to 90%)*2
tr1 E
V
= 10 to 100 lx, R
L
= 1 kΩ —— 10 ms
tr2 E
V
= 100 to 1000 lx, R
L
= 1 kΩ —— 2 ms
tr3 E
V
= 1000 to 10000 lx, R
L
= 100 kΩ —— 500 µs
Fall time (10% to 90%)*2
tf1 E
V
= 10 to 100 lx, R
L
= 1 kΩ —— 10 ms
tf2 E
V
= 100 to 1000 lx, R
L
= 1 kΩ —— 1 ms
tf3 E
V
= 1000 to 10000 lx, R
L
= 100 Ω —— 250 µs
Fig. 1 Output Current Characteristics (Typ.)
10000
1000
100
Output Current I
O
(µA)
Illuminance E
V
(lx)
10
1
1 10 100 1000 10000 100000
(Ta = 25°C, V
CC
= 3.3 V)
Sheet No.: D1-A00501EN
6
GA1A2S100SS/GA1A2S100LY
■ Design Considerations
Design Guidelines
1. This product is not designed to be electromagnetic- and ionized-particle-radiation resistant.
2. Sharp recommends bypass capacitors of at least 0.01 µF between V
CC
and ground, as close as
possible to the device.
3. This device contains three photodiodes and amplifies the differential of the photocurrent in each diode. Sharp
recommends that the light which falls on the device illuminate it as uniformly as possible.
4. For the most reliable sensing, Sharp recommends guarding the device from stray incident light.
■ Manufacturing Guidelines
Soldering Instructions
1. Sharp does not recommend soldering this part using methods that include preheat or solder reflow.
2. When mounting, care should be taken to avoid boundary exfoliation (pad lifting) between the solder and the cir-
cuit board.
3. If hand soldering, use temperatures ≤ 260°C for ≤ 5 seconds.
4. Do not subject the package to excessive mechanical force during soldering as it may cause deformation or
defects in plated connections. Internal connections may be severed due to mechanical force placed on the pack-
age due to the PCB flexing during the soldering process.
Cleaning Instructions
1. Confirm this device's resistance to process chemicals before use, as certain process chemicals may affect the
optical characteristics.
2. Solvent cleaning: Solvent temperature should be 45°C or below. Immersion time should be 3 minutes or less.
3. Ultrasonic cleaning: The effect upon devices varies due to cleaning bath size, ultrasonic power output, cleaning
time, PCB size and device mounting circumstances. Sharp recommends testing using actual production condi-
tions to confirm the harmlessness of the ultrasonic cleaning methods.
4. Recommended solvent materials: Ethyl alcohol, Methyl alcohol, and Isopropyl alcohol.
Fig. 2 Block Diagram (Equivalent Circuit)
Current AMP 2
(With temperature
compensation function)
Current AMP 1
V
CC
OUT
GND
PD for spectral
sensitivity
compensation
(PDB)
Main PD
(PDA, PDC)
P1-P3P4-P6P7-P9P10-P10

GA1A2S100SS

Mfr. #:
Buy GA1A2S100SS
Manufacturer:
Sharp Microelectronics
Description:
Ambient Light Sensors Ambient Light Sensor Linear Output
Lifecycle:
New from this manufacturer.
Delivery:
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