NTB18N06 Datasheet NTP18N06, NTB18N06, NTP18N06G | P1-P3

August, 2005 − Rev. 4

1 Publication Order Number:

NTP18N06/D

NTP18N06, NTB18N06

Power MOSFET

15 A, 60 V, N−Channel TO−220 & D

2

PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

• Pb−Free Packages are Available

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 Vdc

Drain−to−Gate Voltage (R

GS

= 10 mW)

V

DGR

60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t

p

 10 ms)

V

GS

20

30

Vdc

Drain Current

− Continuous @ T

C

= 25°C

− Continuous @ T

C

= 100°C

− Single Pulse (t

p

 10 ms)

I

D

I

D

I

DM

15

8.0

45

Adc

A

pk

Total Power Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

48.4

0.32

W

W/°C

Operating and Storage Temperature Range T

J

, T

stg

−55 to

+175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 25 Vdc, V

GS

= 10 Vdc, V

DS

= 60 Vdc,

I

L(pk)

= 11 A, L = 1.0 mH, R

G

= 25 W)

E

AS

61 mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

R

q

JC

R

q

JA

3.1

72.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

T

L

260 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

MARKING DIAGRAMS

& PIN ASSIGNMENTS

NTx18N06 = Device Code

x = B or P

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

NTx18N06G

AYWW

1

Gate

3

Source

4

Drain

2

Drain

NTx

18N06G

AYWW

1

Gate

3

Sourc

e

4

Drain

2

Drain

1

2

3

4

D

2

PAK

CASE 418AA

STYLE 2

60 V

90 mW @ 10 V

R

DS(on)

TYP

15 A

I

D

MAXV

(BR)DSS

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

N−Channel

D

S

G

NTP18N06, NTB18N06

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 1)

(V

GS

= 0 Vdc, I

D

= 250 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

60

−

67

62.4

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

GS

= 0 Vdc, V

DS

= 60 Vdc)

(V

GS

= 0 Vdc, V

DS

= 60 Vdc, T

J

= 150°C)

I

DSS

−

1.0

10

mAdc

Gate−Body Leakage Current (V

GS

= ± 20 Vdc, V

DS

= 0 Vdc) I

GSS

− − ± 100 nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Note 1)

(V

DS

= V

GS,

I

D

= 250 mAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

2.9

6.2

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 1)

(V

GS

= 10 Vdc, I

D

= 7.5 Adc)

R

DS(on)

− 76 90

mW

Static Drain−to−Source On−Voltage (Note 1)

(V

GS

= 10 Vdc, I

D

= 15 Adc)

(V

GS

= 10 Vdc, I

D

= 7.5 Adc, T

J

= 150°C)

V

DS(on)

−

1.2

1.08

1.62

−

Vdc

Forward Transconductance (Note 1) (V

DS

= 7.0 Vdc, I

D

= 6.0 Adc) g

FS

− 6.8 − mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 Vdc,

f = 1.0 MHz)

C

iss

− 325 450 pF

Output Capacitance

C

oss

− 108 150

Reverse Transfer Capacitance C

rss

− 34 70

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(V

DD

= 30 Vdc, I

D

= 15 Adc,

V

GS

= 10 Vdc,

R

G

= 9.1 W) (Note 1)

t

d(on)

− 10 15 ns

Rise Time t

r

− 25 70

Turn−Off Delay Time t

d(off)

− 14 50

Fall Time t

f

− 13 50

Gate Charge

(V

DS

= 48 Vdc, I

D

= 15 Adc,

V

GS

= 10 Vdc) (Note 1)

Q

t

− 12 22 nC

Q

1

− 4.1 −

Q

2

− 4.5 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward On−Voltage (I

S

= 15 Adc, V

GS

= 0 Vdc) (Note 1)

(I

S

= 15 Adc, V

GS

= 0 Vdc, T

J

= 150°C)

V

SD

−

0.95

0.84

1.15

−

Vdc

Reverse Recovery Time

(I

S

= 15 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms) (Note 1)

t

rr

− 35 −

ns

t

a

− 27 −

t

b

− 7.4 −

Reverse Recovery Stored

Charge

Q

RR

− 0.050 −

mC

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

2. Switching characteristics are independent of operating junction temperature.

ORDERING INFORMATION

Device Package Shipping

†

NTP18N06 TO−220AB 50 Units / Rail

NTP18N06G TO−220AB

(Pb−Free)

50 Units / Rail

NTB18N06

D

2

PAK

50 Units / Rail

NTB18N06G

D

2

PAK

(Pb−Free)

50 Units / Rail

NTB18N06T4

D

2

PAK

800 Units / Tape & Reel

NTB18N06T4G

D

2

PAK

(Pb−Free)

800 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTP18N06, NTB18N06

http://onsemi.com

3

Figure 1. On−Region Characteristics

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

32

24

16

8

43210

Figure 2. Transfer Characteristics

V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

76543

32

24

16

8

0

Figure 3. On−Resistance versus

Gate−to−Source Voltage

I

D

, DRAIN CURRENT (AMPS)

0.2

0.16

0.12

0.04

201612840

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

2

1.6

1.4

1.2

1

0.8

1501251007550250−25−50

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

10

1

0.6

1000

Figure 6. Drain−to−Source Leakage Current

versus Voltage

I

D

, DRAIN CURRENT (AMPS)

I

D

, DRAIN CURRENT (AMPS)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (

W

)

3228

0.08

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

I

DSS

, LEAKAGE (nA)

20 6

0

5

4030 50

V

GS

= 10 V

T

J

= 25°C

T

J

= −55°C

T

J

= 100°C

V

DS

≥ 10 V

T

J

= 25°C

T

J

= −55°C

T

J

= 100°C

V

GS

= 10 V

I

D

= 7.5 A

V

GS

= 10 V

T

J

= 150°C

V

GS

= 0 V

T

J

= 100°C

9 V

8 V

7 V

6.5 V

6 V

5.5 V

5 V

4.5 V

8

24

0.2

0.16

0.12

0.04

201612840

0

3

2

28

0.08

T

J

= 25°C

T

J

= −55°C

T

J

= 100°C

V

GS

= 15 V

24

175

1.8

I

D

, DRAIN CURRENT (AMPS)

NTB18N06

NTB18N06

Products related to this Datasheet