Data Sheet S19688EJ2V0DS
12
μ
PD166009
IIN
V
OUT
Tch
0
0
IIS
IIS,fault
0
Tth
ΔTth
t
Over-temperature protection
The output is switched off if over-temperature is detected. The device switches on again after it cools down.
Power dissipation under reverse battery condition
In case of reverse battery condition, the internal N-ch MOSFET is turned on to reduce the power dissipation
caused by the body diode. Additional power is dissipated by the internal resisters. Following is the formula for
estimation of total power dissipation P
d(rev) in reverse battery condition.
P
d(rev) = Ron(rev) x IL(rev)
2
+ (V
CC − Vf − Iin(rev) x RIN) x Iin(rev)
+ (V
CC − Iis(rev) x RIS) x Iis(rev)
I
in(rev) = (VCC − 2 x Vf) / (RCC + RIN)
Iis(rev) = (VCC − Vf) / (RCC + Ris0 + RIS)
The reverse current through the N-ch MOSFET has to be
limited by the connected load.
In order to turn on the N-ch MOSFET at reverse polarity
condition, the voltage at IN should be around 8 V by using
a MOSFET or small diode in parallel to the input switch.
RIN should be estimated following formula.
R
IN < (|VCC| − 8 V) / 0.08 A
IN
-V
CC
RCC
RIN
RIS
RL
IS
OUT
N-ch MOSFET
Iin(rev)
Iis(rev)
IL(rev)
Ris0
