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71256L20YGI

P1-P3P4-P6P7-P9P10-P10
SEPTEMBER 2013
1
©2013 Integrated Device Technology, Inc. DSC-2946/13
Features
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High-speed address/chip select time
– Military: 25/35/45/55/70/85/100ns (max.)
– Commercial/Industrial: 20/25/35ns (max.) low power only
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Low-power operation
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Battery Backup operation – 2V data retention
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Produced with advanced high-performance CMOS
technology
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Input and output directly TTL-compatible
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Available in standard 28-pin (300 or 600 mil) ceramic DIP,
28-pin (300 mil) SOJ
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Military product compliant to MIL-STD-883, Class B
Description
The IDT 71256 is a 262,144-bit high-speed static RAM organized as
32K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Functional Block Diagram
Address access times as fast as 20ns are available with power
consumption of only 350mW (typ.). The circuit also offers a reduced power
standby mode. When CS goes HIGH, the circuit will automatically go to and
remain in, a low-power standby mode as long as CS remains HIGH. This
capability provides significant system level power and cooling savings.
The low-power (L) version also offers a battery backup data retention
capability where the circuit typically consumes only 5μW when operating
off a 2V battery.
The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,
a 28-pin 300 mil SOJ providing high board level packing densities.
The IDT71256 military RAM is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
CMOS Static RAM
256K (32K x 8-Bit)
IDT71256S
IDT71256L
A
0
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
2946 drw 01
INPUT
DATA
CIRCUIT
WE
CS
V
CC
GND
A
14
I/O
0
I/O
7
CONTROL
CIRCUIT
OE
,
2
IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
Pin Configurations
DIP/SOJ
Top View
Truth Table
(1)
Pin Descriptions
Name Description
A
0
- A
14
Address Inputs
I/O
0
- I/O
7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
GND Ground
V
CC
Power
2946 tbl 01
Capacitance (TA = +25°C, f = 1.0MHz)
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
NOTE:
1. H = V
IH, L = VIL, X = Don't care.
WE CS OE
I/O Function
XHXHigh-Z Standby (I
SB
)
XV
HC
X High-Z Standby (I
SB1
)
H L H High-Z Output Disabled
HLLD
OUT
Read Data
LLXD
IN
Write Data
2946 tbl 02
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
Symbol Rating Com'l. Ind. Mil. Unit
V
TE RM
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Te mpe ra t u r e
0 to +70 -40 to +85 -55 to +125
o
C
T
BIAS
Te mpe ra t u r e
Under Bias
-55 to +125 -55 to +125 -65 to +135
o
C
T
STG
Storage
Te mpe ra t u r e
-55 to +125 -55 to +125 -65 to +150
o
C
P
T
Power
Dissipation
1.0 1.0 1.0 W
I
OUT
DC Output Current 50 50 50 mA
2946 tbl 03
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 0V 11 pF
C
I/O
I/O Capacitance V
OUT
= 0V 11 pF
2946 tbl 04
2946 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
D28-3
D28-1
SO28-5
13
14
28
27
26
25
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
CC
A
14
WE
A
13
A
8
A
10
A
11
OE
A
12
CS
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
9
16
15
6.42
IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
NOTE:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
Grade Temperature GND Vcc
Military -55
O
C to +125
O
C0V 5V ± 10%
Industrial -40
O
C to +85
O
C0V 5V ± 10%
Commercial 0
O
C to +70
O
C0V 5V ± 10%
2946 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
6.0 V
V
IL
Input Low Voltage -0.5
(1)
____
0.8 V
2946 tbl 06
DC Electrical Characteristics
(1,2)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
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NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, all address inputs are cycling at fMAX; f = 0 means no address pins are cycling.
P1-P3P4-P6P7-P9P10-P10

71256L20YGI

Mfr. #:
Buy 71256L20YGI
Manufacturer:
IDT
Description:
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Lifecycle:
New from this manufacturer.
Delivery:
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