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SIE864DF-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
Vishay Siliconix
SiE864DF
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.004
0.008
0.012
0.016
0.020
02468 10
I
D
=20A
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
1ms
10 s
0.1 1 10
10
T
A
= 25 °C
Single Pulse
DC
BVDSS Limited
1s
Limited byR
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
100 ms
10 ms
100 µs
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
www.vishay.com
5
Vishay Siliconix
SiE864DF
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Case
0
5
10
15
20
25
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
Vishay Siliconix
SiE864DF
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65578
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=68 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.1
10
-3
10
-2
110
-1
10
-4
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Source
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P7

SIE864DF-T1-GE3

Mfr. #:
Buy SIE864DF-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 45A POLARPAK
Lifecycle:
New from this manufacturer.
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