March 2008 Rev 7 1/14
14
DALC208
Low capacitance diode array
Features
Protection of 4 lines
Peak reverse voltage: V
RRM
= 9 V per diode
Very low capacitance per diode: C < 5 pF
Very low leakage current: I
R
< 1 µA
Benefits
Cost-effective solution compared with discrete
solution
High efficiency in ESD suppression
No significant signal distortion thanks to very
low capacitance
High reliability offered by monolithic integration
Lower PCB area consumption versus discrete
solution
Complies with the following standards
IEC61000-4-2 level 4
MIL STD 883G-Method 3015-7: class 3,
human body model
Applications
Where ESD and/or over and undershoot
protection for datalines is required:
Sensitive logic input protection
Microprocessor based equipment
Audio / video inputs
Portable electronics
Networks
ISDN equipment
USB interface
Figure 1. Functional diagram
Description
The DALC208SC6 diode array is designed to
protect components which are connected to data
and transmission lines from over voltages caused
by electrostatic discharge (ESD) or other
transients. It is a rail-to-rail protection device also
suited for overshoot and undershoot suppression
on sensitive logic inputs.
The low capacitance of the DALC208SC6
prevents significant signal distortion.
1
SOT23-6L
(Plastic)
I/O 1
I/O 2 I/O 3
I/O 4
REF 2 REF 1
www.st.com
Characteristics DALC208
2/14
1 Characteristics
Figure 2. Input capacitance measurement
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter
Value
Unit
V
PP
IEC61000-4-2, air discharge
IEC61000-4-2, contact discharge
15
8
kV
V
RRM
Peak reverse voltage per diode 9 V
ΔV
REF
Reference voltage gap between V
REF2
and V
REF1
9V
V
In
max. Maximum operating signal input voltage V
REF2
V
V
In
min. Minimum operating signal input voltage V
REF1
V
I
F
Continuous forward current (single diode loaded) 200 mA
I
FRM
Repetitive peak forward current (t
p
= 5 ms, F = 50 kHz) 700 mA
I
FSM
Surge non repetitive forward current - rectangular waveform (See
curve on Figure 3.)
t
p
= 2.5 µs
t
p
= 1 µs
t
p
= 100 µs
6
2
1
A
T
stg
T
j
Storage temperature range
Maximum junction temperature
-55 to + 150
150
°C
°C
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
(1)
500 °C/W
1. Device mounted on FR4 PCB with recommended footprint dimensions.
Table 3. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter Conditions Typ. Max. Unit
V
F
Forward voltage I
F
= 50 mA 1.2 V
I
R
Reverse leakage current per diode V
R
= 5 V 1 µA
C Input capacitance between Line and GND See Figure 2.7 10pF
G
REF1
I/O
+V
CC
REF1 connected to GND
REF2 connected to +Vcc
Input applied :
Vcc = 5 V, Vsign = 30 mV, F = 1 MHz
REF2
V
R
DALC208 Characteristics
3/14
Figure 3. Maximum non-repetitive peak
forward current versus rectangular
pulse duration (T
j
initial = 25 °C)
Figure 4. Reverse clamping voltage versus
peak pulse current
(T
j
initial = 25 °C), typical values.
Rectangular waveform t
p
= 2.5 ms
0.001 0.01 0.1 1 10 100 1000
0
1
2
3
4
5
6
7
8
t (ms)
p
I (A)
FSM
I/O vs
REF1 or
REF2
5 1015202530
0.1
1.0
2.0
V (V)
CL
I (A)
pp
tp=2.5µs
I/O vs REF1
or REF2
Figure 5. Variation of leakage current versus
junction temperature
(typical values)
Figure 6. Input capacitance versus reverse
applied voltage (typical values)
Figure 7. Peak forward voltage drop versus
peak forward current
(typical values),
rectangular waveform t
p
= 2.5 ms
25 50 75 100 125 150
0.01
0.1
1
10
100
T (°C)
j
I
R
(µA)
012345
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V (V)
R
C(pF)
F=1MHz
Vsign=30mV
Vref1/ref2=5V
0 2 4 6 8 10 12 14 16 18 20
0.1
1.0
10.0
V (V)
FM
I (A)
FM
Tj=25°C
Tj=150°C
I/O vs REF 1
or REF2

DALC208SC6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors 8 Diode Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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