Technical information DALC208
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2 Technical information
2.1 Surge protection
The DALC208SC6 is particularly optimized to perform surge protection based on the rail to
rail topology.
The clamping voltage V
CL
can be calculated as follow :
V
CL
+ = V
REF2
+ V
F
for positive surges
V
CL
- = V
REF1
- V
F
for negative surges
with
V
F
= V
T
+ R
d
.I
p
(V
F
forward drop voltage) / (V
T
forward drop threshold voltage)
According to the curve Figure 7 we assume that the value of the dynamic resistance of the
clamping diode is typically R
d
= 0.7 Ω and V
T
= 1.2 V.
For an IEC 61000-4-2 surge Level 4 (Contact Discharge: V
g
=8 kV, R
g
=330 Ω), V
REF2
= +5 V,
V
REF1
= 0 V, and if in first approximation, we assume that : I
p
= V
g
/ R
g
24 A.
So, we find:
–V
CL
++23V
–V
CL
- -18V
Note: The calculations do not take into account phenomena due to parasitic inductances.
2.2 Surge protection application example
If we consider that the connections from the pin REF
2
to V
CC
and from REF
1
to GND are
done by two tracks of 10 mm long and 0.5 mm large; we assume that the parasitic
inductances of these tracks are about 6 nH. So when an IEC 61000-4-2 surge occurs, due
to the rise time of this spike (tr = 1 ns), the voltage V
CL
has an extra value equal to Lw.dI/dt.
The dI/dt is calculated as: dI/dt = Ip/tr 24 A/ns
The overvoltage due to the parasitic inductances is: Lw.dI/dt = 6 x 24 144V
By taking into account the effect of these parasitic inductances due to unsuitable layout, the
clamping voltage will be :
–V
CL
+ = +23 + 144 167V
–V
CL
- = -18 - 144 -162V
We can reduce as much as possible these phenomena with simple layout optimization.
It’s the reason why some recommendations have to be followed (See Section 2.3: How to
ensure good ESD protection).
DALC208 Technical information
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Figure 8. ESD behavior: parasitic phenomena due to unsuitable layout
2.3 How to ensure good ESD protection
While the DALC208SC6 provides a high immunity to ESD surge, an efficient protection
depends on the layout of the board. In the same way, with the rail to rail topology, the track
from the V
REF2
pin to the power supply +V
CC
and from the V
REF1
pin to GND must be as short
as possible to avoid over voltages due to parasitic phenomena. See Figure 8.
It’s often harder to connect the power supply near to the DALC208SC6 unlike the ground
thanks to the ground plane that allows a short connection.
To ensure the same efficiency for positive surges when the connections can’t be short
enough, we recommend putting a capacitance of 100 nF close to the DALC208SC6,
between V
REF2
and ground, to prevent these kinds of overvoltage disturbances.
See Figure 9.
The addition of this capacitance will allow a better protection by providing a constant voltage
during a surge.
Figure 10, Figure 11, and Figure 12 show the improvement of the ESD protection according
to the recommendations described above.
Lw
VI/O
ESD
SURGE
REF1=GND
I/O
REF2=+Vcc
Vf
Lw
di
dt
Lw
di
dt
Vcl+ =
Vcc+Vf+
Lw
di
dt
surge >0
-Vf-
Lw
di
dt
surge <0
Vcl- =
t
tr=1ns
Vcc+Vf
Lw
di
dt
Vcl+
POSITIVE
SURGE
167V
-Lw
di
dt
t
tr=1ns
-Vf
Vcl-
NEGATIVE
SURGE
-162V
Technical information DALC208
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Important
A precaution to take is to put the protection device as close as possible to the disturbance
source (generally the connector).
Note: The measurements have been done with the DALC208SC6 in open circuit.
Figure 9. ESD behavior: optimized layout and
add of a capacitance of 100 nF
Figure 10. ESD behavior: measurement
conditions (with coupling
capacitance)
REF1=GND
VI/O
ESD
SURGE
I/O
REF2=+Vcc
C=100nF
Lw
Vcl+ =
Vcc+Vf
-Vf
surge >0
surge <0
Vcl- =
t
Vcl+
POSITIVE
SURGE
t
Vcl-
NEGATIVE
SURGE
+5V
TEST BOARD
DALC
208
ESD
SURGE
Figure 11. Remaining voltage after the
DALC208SC6 during positive ESD
surge
Figure 12. Remaining voltage after the
DALC208SC6 during negative ESD
surge
IEC61000-4-2
Air Discharge
(150pF/330Ω)
Vpp=15kV
IEC61000-4-2
Air Discharge
(150pF/330Ω)
Vpp=15kV

DALC208SC6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors 8 Diode Array
Lifecycle:
New from this manufacturer.
Delivery:
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