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Team Nexperia
S
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2
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BSH205G2
20 V, P-channel Trench MOSFET
29 April 2015 Product data sheet
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1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Enhanced power dissipation capability of 890 mW
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 - 8 V
I
D
drain current V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - - -2.3 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2 A; T
j
= 25 °C - 120 170
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
BSH205G2 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 29 April 2015 2 / 16
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BSH205G2 TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
BSH205G2 %KB
[1] % = placeholder for manufacturing site code

BSH205G2R

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET 20V P-channel Trench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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