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BSH205G2R

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
BSH205G2 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 29 April 2015 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -20 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -0.45 -0.7 -0.95 V
I
DSS
drain leakage current V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -4.5 V; I
D
= -2 A; T
j
= 25 °C - 120 170 mΩ
V
GS
= -4.5 V; I
D
= -2 A; T
j
= 150 °C - 168 238 mΩ
V
GS
= -2.5 V; I
D
= -1.5 A; T
j
= 25 °C - 150 230 mΩ
V
GS
= -1.8 V; I
D
= -0.6 A; T
j
= 25 °C - 200 320 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -1.5 V; I
D
= -0.1 A; T
j
= 25 °C - 260 600 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -2 A; T
j
= 25 °C - 4.5 - S
Dynamic characteristics
Q
G(tot)
total gate charge - 3.7 6.5 nC
Q
GS
gate-source charge - 0.6 - nC
Q
GD
gate-drain charge
V
DS
= -10 V; I
D
= -2 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 0.8 - nC
C
iss
input capacitance - 418 - pF
C
oss
output capacitance - 45 - pF
C
rss
reverse transfer
capacitance
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 34 - pF
t
d(on)
turn-on delay time - 5 - ns
t
r
rise time - 14 - ns
t
d(off)
turn-off delay time - 43 - ns
t
f
fall time
V
DS
= -10 V; I
D
= -2 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 16 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -0.8 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
BSH205G2 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 29 April 2015 7 / 16
V
DS
(V)
0 -4-3-1 -2
aaa-016179
-4
-2
-6
-8
I
D
(A)
0
-2.5 V
V
GS
= -4.5 V
-1.8 V
-1.5 V
-1.2 V
-3 V
-2.2 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-016180
V
GS
(V)
0 -1.5-1.0-0.5
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
min typ max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 -8-6-2 -4
aaa-016181
0.4
0.2
0.6
0.8
R
DSon
0
-2.2 V
V
GS
= -4.5 V
-3 V
-2.5 V
-1.5 V-1.2 V
-1.8 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 -5-4-2 -3-1
aaa-016182
0.4
0.2
0.6
0.8
R
DSon
(Ω)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= -2 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
BSH205G2 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 29 April 2015 8 / 16
V
GS
(V)
0 -4-3-1 -2
aaa-016183
-4
-
2
-6
-8
I
D
(A)
0
T
j
= 150 °C
T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-016184
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-016185
-0.4
-0.8
-1.2
V
GS(th)
(V)
0
min
typ
max
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
aaa-016186
V
DS
(V)
-10
-1
-10
2
-10-1
10
2
10
3
C
(pF)
10
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BSH205G2R

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Manufacturer:
Nexperia
Description:
MOSFET 20V P-channel Trench MOSFET
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New from this manufacturer.
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