BUK753R4-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 21 April 2011 3 of 14
NXP Semiconductors
BUK753R4-30B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Max value not quoted; Single-shot avalanche rating limited by T
j
(max) of 175 °C.
[5] Repetitive avalanche rating limited by an average T
j
of 170 °C; Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 30 V
V
DGR
drain-gate voltage R
GS
=20kΩ -30V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 3
[1][2]
- 198 A
[3]
-75A
T
mb
=100°C; V
GS
= 10 V; see Figure 1
[3]
-75A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 794 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 255 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1][2]
- 198 A
[3]
-75A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 794 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=75A; V
sup
≤ 30 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
-1.3J
E
DS(AL)R
repetitive drain-source
avalanche energy
[4][5]
--J
