BUK753R4-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 21 April 2011 6 of 14
NXP Semiconductors
BUK753R4-30B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 27 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
V
GSth
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
; see Figure 11
--4.4V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10; see Figure 11
1--V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 12; see Figure 13
-2.93.4mΩ
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 12
; see Figure 13
--6.5mΩ
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 175 °C - - 500 µA
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=24V; V
GS
=10V;
see Figure 14
-75-nC
Q
GS
gate-source charge - 19 - nC
Q
GD
gate-drain charge - 23 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 3713 4951 pF
C
oss
output capacitance - 1249 1499 pF
C
rss
reverse transfer
capacitance
- 460 630 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω
-32-ns
t
r
rise time - 64 - ns
t
d(off)
turn-off delay time - 89 - ns
t
f
fall time - 71 - ns
L
D
internal drain
inductance
from contact screw on mounting base to
centre of die
-3.5-nH
from drain lead 6 mm from package to
centre of die
-4.5-nH
L
S
internal source
inductance
from source lead to source bond pad - 7.5 - nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-70-ns
Q
r
recovered charge - 58 - nC
