NCV7321
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7
LIN recessive level
LIN
t
T_LIN_wake
Detection of Remote Wake−Up
Sleep Mode
Standby Mode
LIN dominant level
T_to_stb
Figure 5. Remote (LIN) Wake−up Detection
V
BB
40% V
BB
60% V
BB
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 5). Positive currents flow into the IC.
Table 5. DC CHARACTERISTICS (V
BB
= 5 V to 27 V; T
J
= −40°C to +150°C; Bus Load = 500 W (V
BB
to LIN); unless otherwise
specified. Typical values are given at V
BB
= 12 V and T
J
= 25°C, unless otherwise specified.)
Symbol
Parameter Conditions Min Typ Max Unit
V
BB
CURRENT CONSUMPTION
I
BB
_ON_rec V
BB
Consumption Normal Mode; LIN Recessive
V
LIN
= V
BB
= V
INH
= V
WAKE
1.6 mA
I
BB
_ON_dom V
BB
Consumption Normal Mode; LIN Dominant
V
BB
= V
INH
= V
WAKE
8 mA
I
BB
_STB V
BB
Consumption Standby Mode
V
LIN
= V
BB
= V
INH
= V
WAKE
350
mA
I
BB
_SLP V
BB
Consumption Sleep Mode
V
LIN
= V
BB
= V
INH
= V
WAKE
30
mA
I
BB
_SLP_18V V
BB
Consumption Sleep Mode, V
BB
< 18 V
V
LIN
= V
BB
= V
INH
= V
WAKE
(Note 15)
20
mA
I
BB
_SLP_12V V
BB
Consumption Sleep Mode, V
BB
= 12 V, T
J
< 85°C
V
LIN
= V
BB
= V
INH
= V
WAKE
(Note 15)
10
mA
POR AND V
BB
MONITOR
PORH_V
BB
Power−on Reset High
Level on V
BB
V
BB
Rising 2 4.5 V
PORL_V
BB
Power−on Reset Low
Level on V
BB
V
BB
Falling 1.7 4 V
MONH_V
BB
Battery Monitoring
High Level
V
BB
Rising 4.5 V
MONL_V
BB
Battery Monitoring Low
Level
V
BB
Falling 3 V
LIN TRANSMITTER
VLIN_dom_LoSup
LIN Dominant Output
Voltage
TxD = Low; V
BB
= 7.3 V 1.2 V
15.Values based on design and characterization. Not tested in production.
16.The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 1.
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Table 5. DC CHARACTERISTICS (V
BB
= 5 V to 27 V; T
J
= −40°C to +150°C; Bus Load = 500 W (V
BB
to LIN); unless otherwise
specified. Typical values are given at V
BB
= 12 V and T
J
= 25°C, unless otherwise specified.)
Symbol UnitMaxTypMinConditionsParameter
LIN TRANSMITTER
VLIN_dom_HiSup
LIN Dominant Output
Voltage
TxD = Low; V
BB
= 18 V 2.0 V
VLIN_REC LIN Recessive Output
Voltage (Note 16)
TxD = High; I
LIN
= 10 mA
V
BB
− 1.5 V
BB
V
ILIN_lim Short Circuit Current
Limitation
V
LIN
= V
BB
_max 40 200 mA
R
slave
Internal Pull−up
Resistance
20 33 47
kW
CLIN Capacitance on Pin
LIN (Note 15)
20 30 pF
LIN RECEIVER
Vbus_dom Bus Voltage for
Dominant State
0.4 V
BB
Vbus_rec Bus Voltage for
Recessive State
0.6 V
BB
Vrec_dom Receiver Threshold LIN Bus Recessive − Dominant 0.4 0.6 V
BB
Vrec_rec Receiver Threshold LIN Bus Dominant − Recessive 0.4 0.6 V
BB
Vrec_cnt Receiver Centre
Voltage
(Vrec_dom + Vrec_rec)/2 0.475 0.525 V
BB
Vrec_hys Receiver Hysteresis (Vrec_rec − Vrec_dom) 0.05 0.175 V
BB
ILIN_off_dom LIN Output Current,
Bus in Dominant State
Normal Mode, Driver Off;
V
BB
= 12 V, V
LIN
= 0 V
−1 mA
ILIN_off_dom_slp LIN Output Current,
Bus in Dominant State
Sleep Mode, Driver Off;
V
BB
= 12 V, V
LIN
= 0 V
−20 −15 −2
mA
ILIN_off_rec LIN Output Current,
Bus in Recessive State
Driver Off;
V
BB
< 18 V; V
BB
< V
LIN
< 18 V
1
mA
ILIN_no_GND Communication not
Affected
V
BB
= GND = 12 V; 0 < V
LIN
< 18 V −1 1 mA
ILIN_no_V
BB
LIN Bus Remains
Operational
V
BB
= GND = 0 V; 0 < V
LIN
< 18 V 5
mA
PIN EN
Vil_EN
Low Level Input
Voltage
−0.3 0.8 V
Vih_EN High Level Input
Voltage
2.0 5.5 V
Rpd_EN Pull−down Resistance
to Ground
150 350 650
kW
PIN TxD
Vil_TxD
Low Level Input
Voltage
−0.3 0.8 V
Vih_TxD High Level Input
Voltage
2.0 5.5 V
Rpd_TxD Pull−down Resistor on
TxD Pin,
Corresponding to
“Weak Pull−down”
Normal Mode or Sleep Mode or
Standby Mode after Power up or
Standby Mode after LIN Wake−up
150 350 650
kW
15.Values based on design and characterization. Not tested in production.
16.The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 1.
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Table 5. DC CHARACTERISTICS (V
BB
= 5 V to 27 V; T
J
= −40°C to +150°C; Bus Load = 500 W (V
BB
to LIN); unless otherwise
specified. Typical values are given at V
BB
= 12 V and T
J
= 25°C, unless otherwise specified.)
Symbol UnitMaxTypMinConditionsParameter
PIN TxD
Ipd_TxD_Strong
Pull−down Current on
TxD Pin Corresponding
to “Strong Pull−down”
Standby Mode after Local Wake−up 1.5 mA
PIN RxD
Iol_RxD
Low Level Output
Current
V
RxD
= 0.4 V, Normal Mode,
V
LIN
= 0 V
1.5 mA
Ioh_RxD High Level Output
Current
V
RxD
= 5 V, Normal Mode,
V
LIN
= V
BB
−5 0 5
mA
PIN WAKE
V_wake_th
WAKE Threshold
Voltage
V
BB
− 3.3 V
BB
− 1.1 V
I_wake_pull−up Pull−up Current on Pin
WAKE
V
WAKE
= 0 V −30 −15 −1
mA
I_wake_leak Leakage of Pin WAKE V
WAKE
= V
BB
−5 0 5
mA
PIN INH
Delta_VH
High Level Voltage
Drop
I
INH
= 15 mA, INH Active 0.05 0.35 0.75 V
I_leak Leakage Current Sleep Mode; V
INH
= 0 V −1 0 1
mA
THERMAL SHUTDOWN
T
JSD
Thermal Shutdown
Junction Temperature
Temperature Rising 150 165 185 °C
T
JSD
_hyst Thermal Shutdown
Hysteresis
5 °C
15.Values based on design and characterization. Not tested in production.
16.The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 1.

NCV7321D12R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LIN Transceivers ESD IMPROVED LINANSC
Lifecycle:
New from this manufacturer.
Delivery:
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