IRF7478PBF Datasheet IRF7478TRPBF, IRF7478PBF | P1-P3

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09/21/04

IRF7478PbF

SMPS MOSFET

HEXFET

®

Power MOSFET

Parameter Max. Units

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 7.0

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 5.6 A

I

DM

Pulsed Drain Current  56

P

D

@T

A

= 25°C Power Dissipation 2.5 W

Linear Derating Factor 0.02 W/°C

V

GS

Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt  3.7 V/ns

T

J

Operating Junction and -55 to + 150

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Notes  through  are on page 8

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

V

DSS

R

DS(on)

max (mW) I

D

60V 26@V

GS

= 10V 4.2A

30@V

GS

= 4.5V 3.5A

l High frequency DC-DC converters

l Lead-Free

Benefits

Applications

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 20

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Thermal Resistance

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

PD- 95280

IRF7478PbF

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 17 ––– ––– S V

DS

= 50V, I

D

= 4.2A

Q

g

Total Gate Charge ––– 21 31 I

D

= 4.2A

Q

gs

Gate-to-Source Charge ––– 4.3 ––– nC V

DS

= 48V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 9.6 ––– V

GS

= 4.5V

t

d(on)

Turn-On Delay Time ––– 7.7 ––– V

DD

= 30V

t

r

Rise Time ––– 2.6 ––– I

D

= 4.2A

t

d(off)

Turn-Off Delay Time ––– 44 ––– R

G

= 6.2Ω

t

f

Fall Time ––– 13 ––– V

GS

= 10V 

C

iss

Input Capacitance ––– 1740 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 300 ––– V

DS

= 25V

C

rss

Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz

C

oss

Output Capacitance ––– 1590 ––– V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

C

oss

Output Capacitance ––– 220 ––– V

GS

= 0V, V

DS

= 48V, ƒ = 1.0MHz

C

oss

eff. Effective Output Capacitance ––– 410 ––– V

GS

= 0V, V

DS

= 0V to 48V 

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.3 V T

J

= 25°C, I

S

= 4.2A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 52 78 ns T

J

= 25°C, I

F

= 4.2A

Q

rr

Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs



Diode Characteristics

2.3

56

A

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 60 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.065 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 20 26 V

GS

= 10V, I

D

= 4.2A 

––– 23 30 V

GS

= 4.5V, I

D

= 3.5A 

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 48V, V

GS

= 0V

––– ––– 100 V

DS

= 48V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 100 V

GS

= 20V

Gate-to-Source Reverse Leakage ––– ––– -100

nA

V

GS

= -20V

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

mΩ

Symbol Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 140 mJ

I

AR

Avalanche Current ––– 4.2 A

IRF7478PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

1

10

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

7.0A

2.5 3.0 3.5 4

.0

V

GS

, Gate-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 25V

20µs PULSE WIDTH

IRF7478PBF

IRF7478PBF

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