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IRF7478PBF

P1-P3P4-P6P7-P8
IRF7478PbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0 10 20 30 40
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
4.2A
V = 12V
DS
V = 30V
DS
V = 48V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
1 10 100 100
0
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
IRF7478PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
DS
0%
0%
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25 50 75 100 125 15
0
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7478PbF
6 www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 15
0
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
1.9A
3.4A
4.2A
0 102030405060
I
D
, Drain Current (A)
0.016
0.018
0.020
0.022
0.024
0.026
0.028
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 10V
V
GS
= 4.5V
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS,
Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 7.0A
P1-P3P4-P6P7-P8

IRF7478PBF

Mfr. #:
Buy IRF7478PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC
Lifecycle:
New from this manufacturer.
Delivery:
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