PHD38N02LT_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 February 2007 6 of 12
NXP Semiconductors
PHD38N02LT
N-channel TrenchMOS logic level FET
T
j
=25°CT
j
=25°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
T
j
=25°C and 175 °C; V
DS
>I
D
× R
DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aab708
0
10
20
30
0 0.2 0.4 0.6 0.8 1
V
DS
(V)
I
D
(A)
1.8 V
T
j
= 25 °C
V
GS
= 1.6 V
10 V 5 V 3 V
2.4 V
2.2 V
2 V
2.6 V
003aab710
0
10
20
30
0 102030
I
D
(A)
R
DSon
(mΩ)
2.6 V
T
j
= 25 °C
3 V
10 V
5 V
V
GS
= 2.4 V
003aab709
0
5
10
15
20
25
0123
V
GS
(V)
I
D
(A)
T
j
= 25 °C
175 °C
03af18
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25°C()
------------------------------
=
