NTD4804NAT4G

© Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. P1
1 Publication Order Number:
NTD4804NA/D
NTD4804NA
Advance Information
Power MOSFET
25 V, 117 A, Single NChannel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage V
DSS
25 V
GatetoSource Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JA
) (Note 1)
Steady
State
T
A
= 25°C
I
D
19
A
T
A
= 85°C 15
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.5 W
Continuous Drain
Current (R
q
JA
) (Note 2)
T
A
= 25°C
I
D
14.5
A
T
A
= 85°C 11
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.43 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
117
A
T
C
= 85°C 91
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
93.75 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
230 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage Temperature T
J
, T
stg
55 to
175
°C
Source Current (Body Diode) I
S
78 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 30 A, R
G
= 25 W)
E
AS
450 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
DPAK
(Bend Lead)
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
DPAK
(Straight Lead)
CASE 369D
STYLE 2
25 V
4.0 mW @ 10 V
R
DS(on)
MAX
117 A
I
D
MAXV
(BR)DSS
5.5 mW @ 4.5 V
http://onsemi.com
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
3 IPAK
(Straight Lead)
CASE 369AD
1
2
3
4
NChannel
D
S
G
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
48
04NG
YWW
48
04NG
Y = Year
WW = Work Week
4804N = Device Code
G= PbFree Package
YWW
48
04NG
NTD4804NA
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoCase (Drain)
R
q
JC
1.6
°C/W
JunctiontoTAB (Drain)
R
q
JCTAB
3.5
JunctiontoAmbient Steady State (Note 1)
R
q
JA
60
JunctiontoAmbient Steady State (Note 2)
R
q
JA
105
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
26 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
GatetoSource Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
7.6 mV/°C
DraintoSource On Resistance R
DS(on)
V
GS
= 10 to 11.5 V
I
D
= 30 A 3.4 4.0 mW
I
D
= 15 A 3.4
V
GS
= 4.5 V
I
D
= 30 A 4.7 5.5
I
D
= 15 A 4.6
Forward Transconductance gFS V
DS
= 15 V, I
D
= 15 A 23 S
CHARGES AND CAPACITANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
4490
pF
Output Capacitance C
oss
952
Reverse Transfer Capacitance C
rss
556
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
30 40
nC
Threshold Gate Charge Q
G(TH)
5.5
GatetoSource Charge Q
GS
13
GatetoDrain Charge Q
GD
13
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
73 nC
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0 W
28
ns
Rise Time t
r
256
TurnOff Delay Time t
d(off)
23
Fall Time t
f
73
TurnOn Delay Time t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0 W
13
ns
Rise Time t
r
88
TurnOff Delay Time t
d(off)
36
Fall Time t
f
29
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4804NA
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.81 1.2
V
T
J
= 125°C 0.72
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
34
ns
Charge Time ta
19
Discharge Time tb 15
Reverse Recovery Time Q
RR
30 nC
PACKAGE PARASITIC VALUES
Source Inductance L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
0.6
W

NTD4804NAT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 14.5A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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