NTD4804NAT4G

NTD4804NA
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
10 V
50
0.01
60
0
90
1.7
1.5
1.0
0.7
10,000
100,000
0521
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
24
0.007
0.005
0.003
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50 5025025 75 125100
23
151005
3
V
DS
10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 175°C
T
J
= 125°C
40
0
240
80
45
T
J
= 25°C
20
6 V
7
1000
4 10
160
610
0.009
70
0.005
80
3.2 V
3.6 V
4.5 V
240
80
40
120
160
120
I
D
= 30 A
T
J
= 25°C
8
0.004
0.006
0.008
0.010
100
V
GS
= 11.5 V
150
100
200
200
0.0025
0.0075
30 4020
T
J
= 25°C
6
10
0.8
0.9
1.6
1.4
1.2
1.3
1.1
NTD4804NA
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
15 0 10 15 25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
2000
55
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
3000
6000
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
4
105
I
D
= 30 A
T
J
= 25°C
Q
2
Q
1
Q
T
3015
0
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.2 0.4 1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.6 0.8
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 30 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
100
100 125
200
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
150
4000
1
3
5
20
300
400
500
3010
5000
25
NTD4804NA
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
10001 100
PULSE WIDTH (ms)
I
D
, DRAIN CURRENT (AMPS)
10
10
125°C
1
100
100°C
25°C
Figure 14. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (ms)
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
R
q
JC
(t) = r(t) R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E+00 1.0E+011.0E−011.0E−021.0E−031.0E−041.0E−05
ORDERING INFORMATION
Order Number Package Shipping
NTD4804NAT4G DPAK
(PbFree)
2500 Tape & Reel
NTD4804NA1G IPAK
(PbFree)
75 Units/Rail
NTD4804NA35G IPAK Trimmed Lead
(3.5 " 0.15 mm)
(PbFree)
75 Units/Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD4804NAT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 14.5A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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