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RT8202AGQW

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
RT8202/A/B
4
DS8202/A/B-03 April 2010www.richtek.com
Absolute Maximum Ratings (Note 1)
z Input Voltage, TON to GND ---------------------------------------------------------------------------------------------- −0.3V to 32V
z BOOT to GND -------------------------------------------------------------------------------------------------------------- −0.3V to 38V
z PHASE to BOOT ---------------------------------------------------------------------------------------------------------- −6V to 0.3V
z VDD, VDDP, VOUT, EN/DEM, FB, PGOOD to GND -------------------------------------------------------------- −0.3V to 6V
z UGATE to PHASE -------------------------------------------------------------------------------------------------------- −0.3V to 6V
z OC to GND ------------------------------------------------------------------------------------------------------------------ −0.3V to 32V
z LGATE to GND ------------------------------------------------------------------------------------------------------------- −0.3V to 6V
z PGND to GND -------------------------------------------------------------------------------------------------------------- −0.3V to 0.3V
z Power Dissipation, P
D
@ T
A
= 25°C
WQFN-16L 4x4 ------------------------------------------------------------------------------------------------------------ 1.852W
WQFN-16L 3x3 ------------------------------------------------------------------------------------------------------------ 1.471W
WQFN-14L 3.5x3.5 ------------------------------------------------------------------------------------------------------- 1.667W
z Package Thermal Resistance (Note 2)
WQFN-16L 4x4, θ
JA
------------------------------------------------------------------------------------------------------- 54°C/W
WQFN-16L 4x4, θ
JC
------------------------------------------------------------------------------------------------------ 7°C/W
WQFN-16L 3x3, θ
JA
------------------------------------------------------------------------------------------------------- 68°C/W
WQFN-16L 3x3, θ
JC
------------------------------------------------------------------------------------------------------ 7.5°C/W
WQFN-14L 3.5x3.5, θ
JA
-------------------------------------------------------------------------------------------------- 60°C/W
WQFN-14L 3.5x3.5, θ
JC
------------------------------------------------------------------------------------------------- 7°C/W
z Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------- 260°C
z Junction Temperature ---------------------------------------------------------------------------------------------------- 150°C
z Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 200V
Electrical Characteristics
(V
DD
= V
DDP
= 5V, V
IN
= 15V, V
OUT
= 1.25V, EN/DEM = V
DD
, R
TON
= 1MΩ, T
A
= 25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
PWM Controller
Quiescent Supply Current VDD + VDDP, FB = 0.8V -- -- 1250 μA
TON Operating Current R
TON
= 1M -- 15 -- μA
VDD + VDDP -- 1 10 μA
TON -- 1 5 μA
Shutdown Current I
SHDN
EN/DEM = 0V −10 −1 -- μA
To be continued
Recommended Operating Conditions (Note 4)
z Input Voltage, V
IN
---------------------------------------------------------------------------------------------------------- 4.5V to 26V
z Supply Voltage, V
DD
, V
DDP
---------------------------------------------------------------------------------------------- 4.5V to 5.5V
z Junction Temperature Range--------------------------------------------------------------------------------------------
−40°C to 125°C
z Ambient Temperature Range--------------------------------------------------------------------------------------------
−40°C to 85°C
RT8202/A/B
5
DS8202/A/B-03 April 2010 www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
FB Reference Voltage V
FB
V
DD
= 4.5 to 5.5V 0.742 0.75 0.758 V
FB Input Bias Current FB = 0.75V −1 0.1 1 μA
Output Voltage Range V
OUT
0.75 -- 3.3 V
On-Time V
IN
= 15V, V
OUT
= 1.25V, R
TON
= 1M 267 334 401 ns
Minimum Off-Time 250 400 550 ns
V
OUT
Shutdown Discharge
Resistance
EN/DEM = GND -- 20 -- Ω
Current Sensing
ILIM Source Current LGATE = High 18 20 22 μA
Current Comparator Offset GND − OC −10 -- 10 mV
Current Limit Setting Range R
ILIM
2.5 -- 10 kΩ
Zero Crossing Threshold GND − PHASE, EN/DEM = 5V −10 -- 5 mV
Fault Protection
GND − PHASE, R
ILIM
= 2.5k 35 50 65 mV
Current Limit Sense
Voltage
V
RILIM
GND − PHASE, R
ILIM
= 10k 170 200 230 mV
Output UV Threshold 60 70 80 %
OVP Threshold
With respect to error comparator
threshold
10 15 20 %
OV Fault Delay FB forced above OV threshold -- 20 -- μs
VDD UVLO Threshold
Rising edge, Hysteresis = 20mV,
PWM disabled below this level
4.1 4.3 4.5 V
Soft-Start Ramp Time
From EN high to internal V
REF
reach
0.71V (0Æ95%)
-- 1.35 -- ms
UV Blank Time From EN signal going high -- 3.1 -- ms
Thermal Shutdown -- 155 -- °C
Thermal Shutdown
Hysteresis
-- 10 -- °C
Driver On-Resistance
UGATE Driver Pull Up BOOT − PHASE = 5V -- 1.5 5 Ω
UGATE Driver Sink R
UGATEsk
BOOT − PHASE = 5V -- 1.5 5 Ω
LGATE Driver Pull Up LGATE, High State (Source) -- 1.5 5 Ω
LGATE Driver Pull Down LGATE, Low State (Sink) -- 0.6 2.5 Ω
UGATE Driver Source/Sink
Current
UGATE − PHASE = 2.5V,
BOOT − PHASE = 5V
-- 1 -- A
LGATE Driver Source
Current
LGATE forced to 2.5V -- 1 -- A
LGATE Driver Sink Current LGATE forced to 2.5V -- 3 -- A
LGATE Rising (PHASE = 1.5V) -- 30 --
Dead Time
UGATE Rising -- 30 --
ns
To be continued
RT8202/A/B
6
DS8202/A/B-03 April 2010www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
Logic I/O
EN/DEM Logic Low Voltage -- -- 0.8 V
EN/DEM Logic High Voltage 2.9 -- -- V
EN/DEM Floating Voltage
EN/DEM Open -- 2 -- V
EN/DEM = V
DD
-- 1 5
Logic Input Current
EN/DEM = 0 −5 −1 --
μA
PGOOD (upper side threshold decide by OV threshold)
Trip Threshold (Falling)
Measured at FB, with respect to
reference, no load.
Hysteresis = 3%
−13 −10 −7 %
Fault Propagation Delay
Falling edge, FB forced below
PGOOD trip threshold
-- 2.5 -- μs
Output Low Voltage I
SINK
= 1mA -- -- 0.4 V
Leakage Current High state, forced to 5.0V -- -- 1 μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θ
JA
is measured in the natural convection at T
A
= 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard. The case point of θ
JC
is on the expose pad for the WQFN package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

RT8202AGQW

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IC REG CTRLR BUCK 16WQFN
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