OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SMBJ48A

P1-P3P4-P6P7-P9P10-P12P13-P13
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 07-Mar-16
7
Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT12C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--2lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--12V
Reverse voltage at I
R
= 1 μA V
R
12 - - V
Reverse current at V
R
= 12 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
13.5 15 16.5 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 15.4 18.7 V
at I
PP
= I
PPM
= 12 A - 21.2 26 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 12 A - 2.2 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 115 150 pF
at V
R
= 6 V; f = 1 MHz - 50 - pF
ELECTRICAL CHARACTERISTICS GSOT15C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--2lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--15V
Reverse voltage at I
R
= 1 μA V
R
15 - - V
Reverse current at V
R
= 15 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
16.5 18 20 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 19.4 23.5 V
at I
PP
= I
PPM
= 8 A - 24.8 28.8 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 8 A - 1.8 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 90 120 pF
at V
R
= 7.5 V; f = 1 MHz - 35 - pF
ELECTRICAL CHARACTERISTICS GSOT24C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--2lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--24V
Reverse voltage at I
R
= 1 μA V
R
24 - - V
Reverse current at V
R
= 24 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
27 30 33 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-3441V
at I
PP
= I
PPM
= 5 A - 41 47 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 5 A - 1.4 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-6580pF
at V
R
= 12 V; f = 1 MHz - 20 - pF
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 07-Mar-16
8
Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (V
C
) is defined by the breakthrough
voltage (V
BR
) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
ELECTRICAL CHARACTERISTICS GSOT36C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--2lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--36V
Reverse voltage at I
R
= 1 μA V
R
36 - - V
Reverse current at V
R
= 36 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
39 43 47 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-4960V
at I
PP
= I
PPM
= 3.5 A - 59 71 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 3.5 A - 1.3 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-5265pF
at V
R
= 18 V; f = 1 MHz - 12 - pF
L1
20361
2 1
3
Ground
BiSy
ELECTRICAL CHARACTERISTICS GSOT03C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3.8V
Reverse voltage at I
R
= 100 μA V
R
3.8 - - V
Reverse current at V
R
= 3.8 V I
R
- - 100 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
4.5 5.3 6.2 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-78.4V
at I
PP
= I
PPM
= 30 A - 14 16.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 210 300 pF
at V
R
= 1.6 V; f = 1 MHz - 190 - pF
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 07-Mar-16
9
Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT04C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--4.5V
Reverse voltage at I
R
= 20 μA V
R
4.5 - - V
Reverse current at V
R
= 4.5 V I
R
--20μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
5.5 6.8 7.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-7.59 V
at I
PP
= I
PPM
= 30 A - 15.7 18.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 155 225 pF
at V
R
= 2 V; f = 1 MHz - 135 - pF
ELECTRICAL CHARACTERISTICS GSOT05C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5.5V
Reverse voltage at I
R
= 10 μA V
R
5.5 - - V
Reverse current at V
R
= 5.5 V I
R
--10μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.5 7.5 8.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-8.19.7V
at I
PP
= I
PPM
= 30 A - 17 20.4 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 130 175 pF
at V
R
= 4 V; f = 1 MHz - 100 - pF
ELECTRICAL CHARACTERISTICS GSOT08C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--8.5V
Reverse voltage at I
R
= 5 μA V
R
8.5 - - V
Reverse current at V
R
= 8.5 V I
R
--5μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
9.5 10.7 11.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 11.7 14 V
at I
PP
= I
PPM
= 18 A - 18.5 22.2 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 80 125 pF
at V
R
= 4 V; f = 1 MHz - 60 - pF
ELECTRICAL CHARACTERISTICS GSOT12C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
- - 12.5 V
Reverse voltage at I
R
= 1 μA V
R
12.5 - - V
Reverse current at V
R
= 12.5 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
13.5 15.7 16.5 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 16.4 19.7 V
at I
PP
= I
PPM
= 12 A - 23.4 28.1 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-5875pF
at V
R
= 7.5 V; f = 1 MHz - 36 - pF
P1-P3P4-P6P7-P9P10-P12P13-P13

SMBJ48A

Mfr. #:
Buy SMBJ48A
Manufacturer:
Littelfuse
Description:
TVS Diodes / ESD Suppressors 600W 48V 5% Uni-Directional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet