© 2002 IXYS All rights reserved
1 - 4
IXDN 55N120 D1
203
Symbol Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 20 kΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 100 A
I
C90
T
C
= 90°C 62 A
I
CM
T
C
= 90°C, t
p
= 1 ms 124 A
RBSOA V
GE
= ±15 V, T
J
= 125°C, R
G
= 22 Ω I
CM
= 100 A
Clamped inductive load, L = 30 µH V
CEK
< V
CES
t
SC
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C 10 µs
(SCSOA) R
G
= 22 Ω, non repetitive
P
C
T
C
= 25°C IGBT 450 W
Diode 220 W
V
ISOL
50/60 Hz; I
ISOL
≤ 1 mA 2500 V~
T
J
-40 ... +150 °C
T
stg
-40 ... +150 °C
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
V
CES
= 1200 V
I
C25
= 100 A
V
CE(sat) typ
= 2.3 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy paralleling
●
MOS input, voltage controlled
●
optional ultra fast diode
●
International standard package
miniBLOC
Advantages
●
Space savings
●
Easy to mount with 2 screws
●
High power density
Typical Applications
●
AC motor speed control
●
DC servo and robot drives
●
DC choppers
●
Uninteruptible power supplies (UPS)
●
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE
= 0 V 1200 V
V
GE(th)
I
C
= 2 mA, V
CE
= V
GE
4.5 6.5 V
I
CES
V
CE
= V
CES
T
J
= 25°C 3.8 mA
T
J
= 125°C 6 mA
I
GES
V
CE
= 0 V, V
GE
= ± 20 V ± 500 nA
V
CE(sat)
I
C
= 55 A, V
GE
= 15 V 2.3 2.8 V
E = Emitter ①, C = Collector
G = Gate, E = Emitter ①
① Either Emitter terminal can be used as
Main or Kelvin Emitter
miniBLOC, SOT-227 B
E153432
G
E
E
C
G
C
E
