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IXDN55N120D1

P1-P3P4-P4
© 2002 IXYS All rights reserved
4 - 4
IXDN 55N120 D1
203
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 20406080100
0
6
12
18
24
0
30
60
90
120
0 20406080100
0
2
4
6
8
10
12
0
100
200
300
400
500
600
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
1
0 102030405060708090100
0
2
4
6
8
10
0
300
600
900
1200
1500
0 102030405060708090100
0
5
10
15
20
0
60
120
180
240
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
IXDN55N120
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
20
40
60
80
100
120
R
G
= 22Ω
T
J
= 125°C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
A
V
P1-P3P4-P4

IXDN55N120D1

Mfr. #:
Buy IXDN55N120D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 55 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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