LTC3831
10
3831fb
APPLICATIONS INFORMATION
and source pins. In addition, connect a 0.1µF decoupling
capacitor across R
IMAX
to fi lter switching noise. Other-
wise, noise spikes or ringing at Q1’s source can cause the
actual current limit to be greater than the desired current
limit set point. Due to switching noise and variation of
R
DS(ON)
, the actual current limit trip point is not highly
accurate. The current limiting circuitry is primarily meant
to prevent damage to the power supply circuitry during
fault conditions. The exact current level where the limit-
ing circuit begins to take effect will vary from unit to unit
as the R
DS(ON)
of Q1 varies. Typically, R
DS(ON)
varies as
much as ±40% and with ±25% variation on the LTC3831’s
I
MAX
current, this can give a ±65% variation on the current
limit threshold.
The R
DS(ON)
is high if the V
GS
applied to the MOSFET is
low. This occurs during power up, when PV
CC1
is ramping
up. To prevent the high R
DS(ON)
from activating the cur-
rent limit, the LTC3831 disables the current limit circuit
if PV
CC1
is less than 2.5V above V
CC
. To ensure proper
operation of the current limit circuit, PV
CC1
must be at
least 2.5V above V
CC
when TG is high. PV
CC1
can go low
when TG is low, allowing the use of an external charge
pump to power PV
CC1
.
Oscillator Frequency
The LTC3831 includes an onboard current controlled os-
cillator that typically free-runs at 200kHz. The oscillator
frequency can be adjusted by forcing current into or out of
the FREQSET pin. With the pin fl oating, the oscillator runs
at about 200kHz. Every additional 1µA of current into/out
of the FREQSET pin decreases/increases the frequency by
10kHz. The pin is internally servoed to 1.265V, connect-
ing a 50k resistor from FREQSET to ground forces 25µA
out of the pin, causing the internal oscillator to run at
approximately 450kHz. Forcing an external 10µA current
into FREQSET cuts the internal frequency to 100kHz. An
internal clamp prevents the oscillator from running slower
than about 50kHz. Tying FREQSET to V
CC
forces the chip
to run at this minimum speed.
Shutdown
The LTC3831 includes a low power shutdown mode,
controlled by the logic at the SHDN pin. A high at SHDN
allows the part to operate normally. A low level at SHDN
for more than 100µs forces the LTC3831 into shutdown
mode. In this mode, all internal switching stops, the COMP
and SS pins pull to ground and Q1 and Q2 turn off. The
LTC3831 supply current drops to <10µA, although off-
state leakage in the external MOSFETs may cause the total
V
IN
current to be somewhat higher, especially at elevated
temperatures. If SHDN returns high, the LTC3831 reruns
a soft-start cycle and resumes normal operation.
External Clock Synchronization
The LTC3831 SHDN pin doubles as an external clock input
for applications that require a synchronized clock. An
internal circuit forces the LTC3831 into external synchro-
nization mode if a negative transition at the SHDN pin is
detected. In this mode, every negative transition on the
SHDN pin resets the internal oscillator and pulls the ramp
signal low. This forces the LTC3831 internal oscillator to
lock to the external clock frequency.
The LTC3831 internal oscillator can be externally syn-
chronized from 100kHz to 500kHz. Frequencies above
300kHz can cause a decrease in the maximum obtainable
duty cycle as rise/fall time and propagation delay take up
a larger percentage of the switch cycle. The low period of
this clock signal must not be >100µs or else the LTC3831
enters into the shutdown mode.
Figure 4 describes the operation of the external synchroni-
zation function. A negative transition at the SHDN pin forces
the internal ramp signal low to restart a new PWM cycle.
Notice that the ramp amplitude is lowered as the external
clock frequency goes higher. The effect of this decrease
in ramp amplitude increases the open-loop gain of the
Figure 3. Current Limit Setting
+
+
12
13
LTC3831
CC
12
µA
0.1µF
Q2
C
OUT
3831 F03
C
IN
V
IN
V
OUT
BG
I
MAX
R
IMAX
I
FB
1k
+
Q1
L
O
TG
LTC3831
11
3831fb
APPLICATIONS INFORMATION
controller feedback loop. As a result, the loop crossover
frequency increases and it may cause the feedback loop
to be unstable if the phase margin is insuffi cient.
To overcome this problem, the LTC3831 monitors the
peak voltage of the ramp signal and adjust the oscillator
charging current to maintain a constant ramp peak.
Input Supply Considerations/Charge Pump
The LTC3831 requires four supply voltages to operate: V
IN
for the main power input, PV
CC1
and PV
CC2
for MOSFET
gate drive and a clean, low ripple V
CC
for the LTC3831
internal circuitry (Figure 5).
In many applications, V
CC
can be powered from V
IN
through an RC fi lter. This supply can be as low as 3V. The
low quiescent current (typically 800µA) allows the use
of relatively large fi lter resistors and correspondingly
small fi lter capacitors. 100 and 4.7µF usually provide
adequate fi ltering for V
CC
. For best performance, connect
the 4.7µF bypass capacitor as close to the LTC3831 V
CC
pin as possible.
Gate drive for the top N-channel MOSFET Q1 is supplied
from PV
CC1
. This supply must be above V
IN
(the main power
supply input) by at least one power MOSFET V
GS(ON)
for
effi cient operation. An internal level shifter allows PV
CC1
to
operate at voltages above V
CC
and V
IN
, up to 14V maximum.
This higher voltage can be supplied with a separate supply,
or it can be generated using a charge pump.
Gate drive for the bottom MOSFET Q2 is provided through
PV
CC2
. This supply only need to be above the power MOSFET
V
GS(ON)
for effi cient operation. PV
CC2
can also be driven
from the same supply/charge pump for the PV
CC1
, or it can
be connected to a lower supply to improve effi ciency.
Figure 6 shows a doubling charge pump circuit that can be
used to provide 2V
IN
gate drive for Q1. The charge pump
consists of a Schottky diode from V
IN
to PV
CC1
and a 0.1µF
capacitor from PV
CC1
to the switching node at the drain of
Q2. This circuit provides 2V
IN
– V
F
to PV
CC1
while Q1 is
ON and V
IN
– V
F
while Q1 is OFF where V
F
is the forward
voltage of the Schottky diode. Ringing at the drain of Q2
can cause transients above 2V
IN
at PV
CC1
; if V
IN
is higher
Figure 4. External Synchronization Operation
Figure 6. Doubling Charge Pump
Figure 5. Supplies Input
SHDN
200kHz
FREE RUNNING
RAMP SIGNAL
TRADITIONAL
SYNC METHOD
WITH EARLY
RAMP
TERMINATION
LTC3831
KEEPS RAMP
AMPLITUDE
CONSTANT
UNDER SYNC
RAMP SIGNAL
WITH EXT SYNC
RAMP AMPLITUDE
ADJUSTED
3831 F04
3831 F05
+
V
CC
PV
CC2
PV
CC1
V
IN
TG
Q1
C
OUT
V
OUT
Q2
L
O
BG
INTERNAL
CIRCUITRY
LTC3831
LTC3831
3831 F06a
+
D
Z
12V
1N5242
Q1
L
O
Q2 C
OUT
V
OUT
0.1µF
PV
CC2
OPTIONAL
USE FOR V
IN
≥ 7V
MBR0530T1
PV
CC1
TG
BG
V
IN
LTC3831
12
3831fb
APPLICATIONS INFORMATION
than 7V, a 12V zener diode should be included from PV
CC1
to PGND to prevent transients from damaging the circuitry
at PV
CC1
or the gate of Q1.
For applications with a lower V
IN
supply, a tripling charge
pump circuit shown in Figure 7 can be used to provide
2V
IN
and 3V
IN
gate drive for the external top and bottom
MOSFETs respectively. This circuit provides 3V
IN
– 3V
F
to
PV
CC1
while Q1 is ON and 2V
IN
– 2V
F
to PV
CC2
where V
F
is the forward voltage of the Schottky diode. The circuit
requires the use of Schottky diodes to minimize forward
drop across the diodes at start-up. The tripling charge
pump circuit can rectify any ringing at the drain of Q2 and
provide more than 3V
IN
at PV
CC1
; a 12V zener diode should
be included from PV
CC1
to PGND to prevent transients from
damaging the circuitry at PV
CC1
or the gate of Q1.
The charge pump capacitors for PV
CC1
refresh when the
BG pin goes high and the switch node is pulled low by
Q2. The BG on time becomes narrow when the LTC3831
operates at maximum duty cycle (95% typical) which
can occur if the input supply rises more slowly than the
soft-start capacitor or the input voltage droops during
load transients. If the BG on time gets so narrow that the
switch node fails to pull completely to ground, the charge
pump voltage may collapse or fail to start causing excessive
dissipation in external MOSFET Q1. This is most likely with
low V
CC
voltages and high switching frequencies, coupled
with large external MOSFETs that slow the BG and switch
node slew rates.
The LTC3831 overcomes this problem by sensing the
PV
CC1
voltage when TG is high. If PV
CC1
is less than 2.5V
above V
CC
, the maximum TG duty cycle is reduced to
70% by clamping the COMP pin at 1.8V (Q
C
in the Block
Diagram). This increases the BG on time and allows the
charge pump capacitors to be refreshed.
For applications using an external supply to power PV
CC1
,
this supply must also be higher than V
CC
by at least 2.5V
to ensure normal operation.
Connecting the Ratiometric Reference Input
The LTC3831 derives its ratiometric reference, V
REF
,
using an internal resistor divider. The top and bottom of
the resistor divider is connected to the R
+
and R
pins
respectively. This permits the output voltage to track at
a ratio of the differential voltage at R
+
and R
.
The LTC3831 can operate with a minimum V
FB
of 1.1V
and maximum V
FB
of (V
CC
– 1.75V). With R
connected
to GND, this gives a V
R
+
input range of 2.2V to (2 • V
CC
– 3.5V). If V
R
+
is higher than the permitted input voltage,
increase the V
CC
voltage to raise the input range.
In a typical DDR memory termination application as shown
in Figure 1, R
+
is connected to V
DDQ
, the supply voltage
of the interface, and R
to GND. The output voltage V
TT
is
connected to the FB pin, so V
TT
= 0.5 • V
DDQ
.
If a ratio greater than 0.5 is desired, it can be achieved
using an external resistor divider connected to V
TT
and
FB pin. Figure 8 shows an application that generates a
V
TT
of 0.6 • V
DDQ
.
Figure 7. Tripling Charge Pump
LTC3831
3831 F07
+
D
Z
12V
1N5242
10µF
TG
BG
0.1µF
Q1
L
O
Q2 C
OUT
V
OUT
0.1µF
PV
CC2
1N5817
1N5817
1N5817
PV
CC1
V
IN

LTC3831IGN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Hi Pwr Sync Sw Reg Cntr for DDR Memory T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union