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IRFH5007TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features
Benefits
PQFN 5X6 mm
V
DS
75 V
R
DS(on) max
(@V
GS
= 10V)
5.9 mΩ
Q
g (typical)
65 nC
R
G (typical)
1.2 Ω
I
D
(@T
mb
= 25°C)
100 A
Low R
DSon
(
≤
5.9m
Ω
) Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
0.8°C/W) Enables Better Thermal Dissipation
100% Rg tested Increased Reliability
Low Profile (
≤
0.9 mm)
results in
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
mb
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
13
100
-55 to + 150
3.6
0.029
156
V
W
A
°C
Max.
17
88
400
±20
75
IRFH5007PbF
Form
Quantity
IRFH5007PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5007TRPBF
Base Part Number Package Type
Standard Pack
Orderable Part Number
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
IRFH5007PbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.1 5.9
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 100 ––– ––– S
Q
g
Total Gate Charge ––– 65 98
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 11 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.5 –––
Q
gd
Gate-to-Drain Charge ––– 20 –––
Q
godr
Gate Charge Overdrive ––– 29.5 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 24.5 –––
Q
oss
Output Charge ––– 21 ––– nC
R
G
Gate Resistance ––– 1.2
–––
Ω
t
d(on)
Turn-On Delay Time ––– 10 –––
t
r
Rise Time ––– 14 –––
t
d(off)
Turn-Off Delay Time ––– 30 –––
t
f
Fall Time ––– 11 –––
C
iss
Input Capacitance ––– 4290 –––
C
oss
Output Capacitance ––– 510 –––
C
rss
Reverse Transfer Capacitance ––– 210 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 31 47 ns
Q
rr
Reverse Recovery Charge ––– 170 255 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 150μA
A
100
––– ––– 400
––– –––
nA
ns
pF
nC
Conditions
See Fig.15
Max.
250
50
ƒ = 1.0MHz
V
DS
= 38V
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 38V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 25V
V
GS
= 20V
V
GS
= -20V
V
DS
= 75V, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 38V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 10V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 15V, I
D
= 50A
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
mΩ
μA
I
D
= 50A
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC-mb
Junction-to-Mounting Base 0.5 0.8
R
θ
JC
(Top)
Junction-to-Case
––– 15 °C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 22
IRFH5007PbF
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
2 3 4 5 6 7
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 50A
V
GS
= 10V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
BOTTOM 3.75V
≤
60μs PULSE WIDTH
Tj = 25°C
3.75V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.75V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
BOTTOM 3.75V
0 20406080100
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 60V
V
DS
= 38V
V
DS
= 15V
I
D
= 50A
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
P1-P3P4-P6P7-P9

IRFH5007TRPBF

Mfr. #:
Buy IRFH5007TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC
Lifecycle:
New from this manufacturer.
Delivery:
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