IRFH5007TRPBF

IRFH5007PbF
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150μA
I
D
= 500μA
I
D
= 1.0mA
I
D
= 1.0A
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRFH5007PbF
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
16
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 50A
T
J
= 25°C
T
J
= 125°C
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
1100
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 6.6A
13A
BOTTOM 50A
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 125°C and
Tstart =25°C (Single Pulse)
IRFH5007PbF
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
1K
VCC
DUT
0
L

IRFH5007TRPBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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