WeEn Semiconductors
BT258S-800R
Logic level thyristor
BT258S-800R All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 3 / 12
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
V
RRM
repetitive peak reverse
voltage
- 800 V
I
T(AV)
average on-state current half sine wave; T
mb
≤ 111 °C; Fig. 1 - 5 A
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 111 °C; Fig. 2;
Fig. 3
- 8 A
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
- 75 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms - 82 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 28 A²s
dI
T
/dt rate of rise of on-state
current
I
T
= 10 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs - 50 A/µs
I
GM
peak gate current - 2 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature [1] - 125 °C
[1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ
conduction
angle,
(degrees)
form
factor
a
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
