OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BT258S-800R,118

P1-P3P4-P6P7-P9P10-P12P13-P13
WeEn Semiconductors
BT258S-800R
Logic level thyristor
BT258S-800R All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 6 / 12
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 6 - - 2 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
Device mounted on an FR4 printed-
circuit board, single-sided copper, tin-
plated and standard footprint; Fig. 7
- 75 - K/W
aaa-008347
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
P
t
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
7.0
7.0
2.15
2.5
1.5
4.57
aaa-008459
All dimensions are in mm
Plastic meets requirements of UL94 V-O at 3.175 mm
Fig. 7. SOT428: minimum pad sizes for surface-mounting
WeEn Semiconductors
BT258S-800R
Logic level thyristor
BT258S-800R All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 7 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 8 - 50 200 µA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 9 - 0.4 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 10 - 0.3 6 mA
V
T
on-state voltage I
T
= 16 A; T
j
= 25 °C; Fig. 11 - 1.3 1.6 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 12
- 0.4 1 VV
GT
gate trigger voltage
V
D
= 800 V; I
T
= 0.1 A; T
j
= 110 °C;
Fig. 12
0.1 0.2 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform; Fig. 13
50 100 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 10 A; V
D
= 800 V; I
G
= 5 mA; dI
G
/
dt = 0.2 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 536 V; T
j
= 125 °C; I
TM
= 12 A;
V
R
= 24 V; (dI
T
/dt)
M
= 10 A/µs; dV
D
/
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
- 100 - µs
T
j
(°C)
-50 1501000 50
aaa-008348
1
2
3
0
I
GT
I
GT(25°C)
Fig. 8. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
aaa-008349
1
2
3
0
I
L
I
L(25°C)
Fig. 9. Normalized latching current as a function of
junction temperature
WeEn Semiconductors
BT258S-800R
Logic level thyristor
BT258S-800R All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 8 / 12
T
j
(°C)
-50 1501000 50
aaa-008350
1
2
3
0
I
H
I
H(25°C)
Fig. 10. Normalized holding current as a function of
junction temperature
aaa-008376
V
T
(V)
0 321
10
15
5
20
25
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.0 V; R
s
= 0.04 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 11. On-state current as a function of on-state
voltage
T
j
(°C)
-50 1501000 50
aaa-008352
0.8
0.4
1.2
1.6
0
V
GT(25°C)
V
GT
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
aaa-008371
T
j
(°C)
0 15010050
10
2
10
10
3
dV
D
/dt
(V/µs)
1
(1)
(1) R
GK
= 100 Ω
Fig. 13. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
P1-P3P4-P6P7-P9P10-P12P13-P13

BT258S-800R,118

Mfr. #:
Buy BT258S-800R,118
Manufacturer:
WeEn Semiconductors
Description:
SCRs TAPE13 THY-GP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet