IRFB7430PbF
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 2, 2015
2
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤ 100A, di/dt ≤ 990A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C..
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50Ω, I
AS
= 54A,
V
GS
=10V.
* Halogen -Free since April 30, 2014
Absolute Maximum Ratings
Symbol Parameter Units
D
C
Continuous Drain Current, V
GS
D
C
Continuous Drain Current, V
GS
D
C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
DM
Pulsed Drain Current
D
C
Maximum Power Dissipation
Linear Derating Factor W/°C
GS
Gate-to-Source Voltage
J
Operating Junction and
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
AS (Thermally limited)
Single Pulse Avalanche Energy
AS (Thermally limited)
Single Pulse Avalanche Energy
AR
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol Parameter Typ. Max. Units
JC
Junction-to-Case
0.40
CS
Case-to-Sink, Flat Greased Surface
JA
Junction-to-Ambient
°C/W
A
°C
300
See Fig. 14, 15, 22a, 22b
375
Max.
409
289
1524
195
-55 to + 175
± 20
2.5
10lbf
in (1.1N m)
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C
Static Drain-to-Source On-Resistance
––– 1.0 1.3
m
Ω
––– 1.2 ––– V
GS
= 6.0V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage 2.2 ––– 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.1 –––
R
DS(on)
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 100A
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
