IRFB7430PBF

Mfr. #:: IRFB7430PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFB7430PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRFB7430PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 409 A

Rds On - Drain-Source Resistance:: 1.3 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 460 nC

Pd - Power Dissipation:: 375 W

Tradename:: StrongIRFET

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001551786

Unit Weight:: 0.211644 oz

Tags: IRFB7430, IRFB743, IRFB74, IRFB7, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB7430PBF Description

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 1.3 mOhm 460 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 40V 409A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: TO-220AB Polarity: N Power dissipation: 375 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 40V 409A Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 40 V 1.3 mOhm 300 nC Automotive HEXFET® Power Mosfet - TO-220-3

***nell: MOSFET, 40V, 195A, Q101, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Glowplug; Relay Replacement

***ure Electronics: Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 40V 343A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***el Electronic: Res Thick Film 2512 1K Ohm 5% 1W ±200ppm/C Molded SMD Automotive Punched Plastic T/R

***(Formerly Allied Electronics): MOSFET, 40V, 343A, 1.7 MOHM, 108 NC QG,TO220

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Logic Level | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N-CH 40V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:195A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

***ure Electronics: Single N-Channel 40 V 1.25 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

***ical: Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube

***et: MOSFET, 40V, 195A, 1.25 MOHM, 180 NC QG, LOGIC LEVEL, TO220

***nell: MOSFET, N-CH, 40V, 195A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.001o; Available until stocks are exhausted Alternative available

***ineon: Benefits: Optimized for Logic Level Drive; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free; RoHS Compliant, Halogen-Free

***et: Trans MOSFET N-CH 40V 198A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 75 A 40 V 0.0045 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***peria: N-channel TrenchMOS standard level FET

***ernational Rectifier: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free and Halogen Free TO-220AB package

***(Formerly Allied Electronics): MOSFET, 40V, 195A, 1.7 MOHM, 160 NC QG, TO-220, HALOGEN-FREE

*** Electronic Components: IGBT Transistors MOSFET MOSFT 40V 195A 1.7 mOhm 160nC

***ure Electronics: N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220

***emi: N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

***ical: Trans MOSFET N-CH 30V 19A 3-Pin (3+Tab) TO-220AB Rail

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

IRFB7430PBF More Information

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Part #	Mfg.	Description	Stock	Price
IRFB7430PBF DISTI # V99:2348_13890206	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2109	1000:$1.4400 500:$1.6720 250:$1.8870 100:$1.9750 10:$2.2080 1:$2.5040
IRFB7430PBF DISTI # IRFB7430PBF-ND	Infineon Technologies AG	MOSFET N CH 40V 195A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	1436In Stock	1000:$1.7709 500:$2.0997 100:$2.5930 10:$3.1620 1:$3.5400
IRFB7430PBF DISTI # 26198119	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2109	1000:$1.4400 500:$1.6720 250:$1.8870 100:$1.9750 10:$2.2080 5:$2.5040
IRFB7430PBF DISTI # 25230024	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1051	500:$1.8336 250:$2.0448 100:$2.1600 50:$2.2656 25:$2.3808 10:$2.4864
IRFB7430PBF DISTI # 30609125	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1013	500:$2.5245 100:$2.7157 50:$3.0728 10:$3.6465 7:$4.0672
IRFB7430PBF DISTI # SP001551786	Infineon Technologies AG	Trans MOSFET N-CH 40V 409A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001551786) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1500	1:€1.6900 10:€1.4900 25:€1.3900 50:€1.2900 100:€1.2900 500:€1.1900 1000:€1.1900
IRFB7430PBF DISTI # IRFB7430PBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 409A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRFB7430PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 0
IRFB7430PBF DISTI # IRFB7430PBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 409A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7430PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.0900 10000:$1.0900
IRFB7430PBF DISTI # 53W9267	Infineon Technologies AG	MOSFET Transistor, N Channel, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V , RoHS Compliant: Yes	16	1:$3.0500 10:$2.5900 25:$2.4800 50:$2.3600 100:$2.2500 250:$2.1300 500:$1.9100
IRFB7430PBF DISTI # 942-IRFB7430PBF	Infineon Technologies AG	MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC RoHS: Compliant	773	1:$3.0500 10:$2.5900 100:$2.2500 250:$2.1300 500:$1.9100 1000:$1.6100
IRFB7430PBF DISTI # 7769172	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 195A TO220AB, EA	113	1:£2.3600 25:£1.5500 50:£1.5000 100:£1.4500 200:£1.4000
IRFB7430PBF DISTI # 7769172P	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 195A TO220AB, TU	71	25:£1.5500 50:£1.5000 100:£1.4500 200:£1.4000
IRFB7430PBF DISTI # IRFB7430PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,409A,375W,TO220AB	66	1:$4.4400 3:$3.8300 10:$3.1900 100:$2.7100
IRFB7430PBF	International Rectifier	RoHS: Compliant	Europe - 188
IRFB7430PBF DISTI # IRFB7430PBF	Infineon Technologies AG	N-Ch 40V 195A 375W 0,0013R TO220AB RoHS: Compliant	140	10:€1.8500 50:€1.4500 200:€1.2500 500:€1.2100
IRFB7430PBF DISTI # XSKDRABV0021433	INF	RoHS: Compliant	612	350:$2.7800 612:$2.5400
IRFB7430PBF DISTI # XSLY00000000936	INFINEON/IR	TO-220AB RoHS: Compliant	8820	450:$1.5700 8820:$1.4700
IRFB7430PBF DISTI # C1S322000489020	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2119	500:$1.6720 250:$1.8870 100:$1.9750 10:$2.2080 1:$2.5040
IRFB7430PBF DISTI # C1S322000489039	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 409A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1013	1000:$1.9100 500:$1.9800 100:$2.1300 50:$2.4100 10:$2.8600 1:$3.1900
IRFB7430PBF DISTI # 2253784	Infineon Technologies AG	MOSFET, N-CH, 40V, 195A, TO-220AB RoHS: Compliant	36	1:£2.4100 10:£1.5300 100:£1.4300 250:£1.3700 500:£1.3000
IRFB7430PBF DISTI # 2253784	Infineon Technologies AG	MOSFET, N-CH, 40V, 195A, TO-220AB RoHS: Compliant	16	1:$4.8300 10:$4.1000 100:$3.5600 250:$3.3800 500:$3.0300 1000:$2.5600

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IRFB7430PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes