© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 4
1 Publication Order Number:
NTMFS4983NF/D
NTMFS4983NF
Power MOSFET
30 V, 106 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
30
A
T
A
= 85°C 22
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
3.13 W
Continuous Drain
Current R
q
JA
v
10 sec
T
A
= 25°C
I
D
48
A
T
A
= 85°C 34
Power Dissipation
R
q
JA,
t v 10 sec
T
A
= 25°C P
D
7.7 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
22
A
T
A
= 85°C 16
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.7 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
106
A
T
C
= 85°C 76
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
38 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
320 A
Current limited by package T
A
= 25°C I
Dmaxpkg
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
54 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, I
L
= 45 A
pk
,
L = 0.1 mH, R
G
= 25 W)
EAS 101 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4983NF
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
2.1 mW @ 10 V
106 A
3.1 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4983NFT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4983NFT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
G
S
D
(5, 6)
(4)
(1, 2, 3)
