NTMFS4983NFT1G

NTMFS4983NF
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
V
GS
= 3.4 V
3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
4.0 V
4.2 V
4.4 V to 4.5 V
7.5 V to 10 V
0
20
40
60
80
100
120
140
160
180
200
1.0 1.5 2.0 2.5 3.0 3.5 4
.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
= 5 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.0E+00
0.2E−02
0.4E−02
0.6E−02
0.8E−02
1.0E−02
1.2E−02
1.4E−02
1.6E−02
1.8E−02
2.0E−02
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
I
D
= 30 A
T
J
= 25°C
3.0E−03
2.8E−03
2.6E−03
2.4E−03
2.2E−03
2.0E−03
1.8E−03
1.6E−03
1.4E−03
1.2E−03
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5 20 35 50 65 80 95 110 125 140 1
55
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
D
= 20 A
V
GS
= 10 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (A)
1.00E−01
1.00E−02
1.00E−03
1.00E−04
1.00E−05
05 252010 15
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
NTMFS4983NF
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
0 5 10 15 20 25 30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C
oss
C
rss
C
iss
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
0
1
2
3
4
5
6
7
8
9
10
11
0 5 10 15 20 25 30 35 40 45 50
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
Q
T
Q
gs
Q
gd
1
10
100
1000
1 10 100
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 15 V
I
D
= 10 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
f
t
r
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0
1
2
3
4
5
6
7
8
9
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
Figure 10. Diode Forward Voltage vs. Current
I
S
, SOURCE CURRENT (A)
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
1 ms
10 ms
dc
I
D
, DRAIN CURRENT (A)
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 45 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
NTMFS4983NF
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
r(t)
(°C/W)
PULSE TIME (s)
Figure 13. Thermal Response
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100
0
0.01
0.1
1
10
100

NTMFS4983NFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 160A 2.1MO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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