MOSFET Absolute Maximum Rating (Per-Section)
Symbol Parameter Min Typ Max Unit
BV
DSS
Drain Source Voltage 500 V
I
D
Continuous Drain Current T
HS
= 25°C 30 A
R
DS(on)
Drain-Source On State Resistance 0.24 Ω
T
jmax
Operating Temperature 175 °C
MOSFET Dynamic Characteristics (Per-Section)
Section A and B Output Switching Performance
Symbol Characteristic Min Typ Max Typ
T
ON
Leading Edge 10% to 90% 2 3 4
ns
T
OFF
Trailing Edge 10% to 90% 45 TBD 49
T
DLY(ON)
Total Throughput Delay Time, ON 45 TBD 47
T
DLY(OFF)
Total Throughput Delay Time, OFF 49 50 51
∆T
DLY(ON)
Delta T
ON
Delay between Section A and B -0.5 0 1.5
∆T
DLY(OFF)
Delta T
OFF
Delay between Section A and B 0 0.6 1.3
Symbol Parameter Min Typ Max Unit
C
ISS
Input Capacitance 1800
pF
C
oss
Output Capacitance 335
C
rss
Reverse Transfer Capacitance 75
MOSFET Thermal Characteristics (Total Package)
Symbol Parameter Min Typ Max Unit
R
θ
JC
Junction to Case Thermal Resistance .06
°C/W
R
θ
JHS
Junction to Heat Sink Thermal Resistance .140
T
JSTG
Storage Junction Temperature
-55 to 150
°C
P
DHS
Maximum Power Dissipation @ T
SINK
= 25°C
1.07
KW
P
DC
Total Power Dissipation @ T
C
= 25°C
2.5
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4971 Rev E 12-2009
Symbol Parameter Min Typ Max Unit
C
out
Output Capacitance 2500 pF
R
out
Output Resistance .8 Ω
L
out
Output Inductance 3 nH
F
MAX
Operating Frequency CL = 3000nF + 50Ω 30
MHz
F
MAX
Operating Frequency RL = 50Ω 50
Driver Output Characteristics DRF1300(G)
Symbol Parameter Min Typ Max Unit
R
θ
JC
Thermal Resistance Junction to Case 1.5
°C/W
R
θ
JHS
Thermal Resistance Junction to Heat Sink 2.5
T
JSTG
Storage Temperature
-55 to 150
°C
P
DJHS
Maximum Power Dissipation @ T
SINK
= 25°C
60
W
P
DJC
Total Power Dissipation @ T
C
= 25°C
100
Driver Thermal Characteristics
