KAF−0402
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4
Figure 4. Output Schematic
Source
Follower
#1
Source
Follower
#2
HCCD
Charge
Transfer
Floating
Diffusion
V
DD
V
OUT
V
RD
V
OG
R
H2
H2
H1
H1
Output Structure
Charge presented to the floating diffusion is converted
into a voltage and current amplified in order to drive off-chip
loads. The resulting voltage change seen at the output is
linearly related to the amount of charge placed on the
floating diffusion. Once the signal has been sampled by the
system electronics, the reset gate (fR) is clocked to remove
the signal and the floating diffusion is reset to the potential
applied by Vrd (see Figure 4). More signal at the floating
diffusion reduces the voltage seen at the output pin. In order
to activate the output structure, an off-chip load must be
added to the Vout pin of the device such as shown in
Figure 8.
Dark Reference Pixels
There are 4 light shielded pixels at the beginning of each
line, and 12 at the end. There are 4 dark lines at the start of
every frame and 4 dark lines at the end of each frame. Under
normal circumstances, these pixels do not respond to light.
However, dark reference pixels in close proximity to an
active pixel can scavenge signal depending on light intensity
and wavelength and therefore will not represent the true dark
signal.
Dummy Pixels
Within the horizontal shift register are 10 leading
additional pixels that are not associated with a column of
pixels within the vertical register. These pixels contain only
horizontal shift register dark current signal and do not
respond to light. A few leading dummy pixels may scavenge
false signal depending on operating conditions. There are
two more dummy pixels at the end of each line.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron-hole pairs within the sensor. These photon induced
electrons are collected locally by the formation of potential
wells at each photogate or pixel site. The number of
electrons collected is linearly dependent on light level and
exposure time and non-linearly dependent on wavelength.
When the pixel’s capacity is reached, excess electrons will
leak into the adjacent pixels within the same column. This
is termed blooming. During the integration period, the fV1
and fV2 register clocks are held at a constant (low) level.
See Figure 9.
Charge Transport
Referring again to Figure 10, the integrated charge from
each photogate is transported to the output using a two-step
process. Each line (row) of charge is first transported from
the vertical CCD to the horizontal CCD register using the
fV1 and fV2 register clocks. The horizontal CCD is
presented a new line on the falling edge of fV2 while fH1
is held high. The horizontal CCD then transports each line,
pixel by pixel, to the output structure by alternately clocking
the fH1 and fH2 pins in a complementary fashion. On each
falling edge of fH2 a new charge packet is transferred onto
a floating diffusion and sensed by the output amplifier.
KAF−0402
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5
Physical Description
Pin Description and Device Orientation
Figure 5. Pinout Diagram
VOG 1
VOUT 2
VDD 3
VRD 4
fR5
VSS 6
fH1 7
fH2 8
N/C 9
N/C 10
VSUB 11
N/C 12
Pin 1
Pixel 1,1
13 N/C
14 VSUB
15 fV1
16 fV1
17 fV2
18 fV2
19 fV2
20 fV2
21 fV1
22 fV1
23 GUARD
24 N/C
Table 4. PIN DESCRIPTION
Pin Name Description
1 VOG Output Gate
2 VOUT Video Output
3 VDD Amplifier Supply
4 VRD Reset Drain
5
fR
Reset Clock
6 VSS Amplifier Supply Return
7
fH1
Horizontal CCD Clock − Phase 1
8
fH2
Horizontal CCD Clock − Phase 2
9 N/C No Connection
10 N/C No Connection
11 VSUB Substrate
12 N/C No Connection
Pin Name Description
13 N/C No Connection
14 VSUB Substrate
15
fV1
Vertical CCD Clock − Phase 1
16
fV1
Vertical CCD Clock − Phase 1
17
fV2
Vertical CCD Clock − Phase 2
18
fV2
Vertical CCD Clock − Phase 2
19
fV2
Vertical CCD Clock − Phase 2
20
fV2
Vertical CCD Clock − Phase 2
21
fV1
Vertical CCD Clock − Phase 1
22
fV1
Vertical CCD Clock − Phase 1
23 GUARD Guard Ring
24 N/C No Connection
KAF−0402
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6
IMAGING PERFORMANCE
Specifications
Electro-Optical
All values measured at 25°C and nominal operating conditions. These parameters exclude defective pixels.
Table 5. SPECIFICATIONS
Description Symbol Min. Nom. Max. Units Notes Verification Plan
Saturation Signal
Vertical CCD Capacity
Horizontal CCD Capacity
Output Node Capacity
N
SAT
85,000
170,000
190,000
100,000
200,000
220,000
240,000
e
/pix 1 Design
9
Quantum Efficiency
(see Figure 6)
Design
9
Photoresponse Non-Linearity PRNL 1.0 2.0 % 2
Photoresponse Non-Uniformity PRNU 0.8 % 3 Die
8
Dark Signal J
DARK
15
6
30
10
e
/pix/sec
pA/cm
2
4 Die
8
Dark Signal Doubling
Temperature
6.3 7 °C Design
9
Dark Signal Non-Uniformity DSNU 15 30 e
/pix/sec 5 Die
8
Dynamic Range DR 72 76 dB 6 Design
9
Charge Transfer Efficiency CTE 0.99997 0.99999 Die
8
Output Amplifier DC Offset V
ODC
V
RD
V
RD
+ 0.5 V
RD
+ 1.0 V Design
9
Output Amplifier Sensitivity V
OUT
/N
e
9 10
mV/e
Design
9
Output Amplifier Output
Impedance
Z
OUT
180 200 220
W
Design
9
Noise Floor n
e
15 20 electrons 7
1. For pixel binning applications, electron capacity up to 330,000 can be achieved with modified CCD inputs.
2. Worst case deviation from straight line fit, between 2% and 90% of V
SAT
.
3. One Sigma deviation of a 128 × 128 sample when CCD illuminated uniformly at half of saturation.
4. Average of all pixels with no illumination at 25°C.
5. Average dark signal of any of 11 × 8 blocks within the sensor (each block is 128 × 128 pixels).
6. 20LOG (N
SAT
/n
e
) at nominal operating frequency and 25°C.
7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the output amplifier power
spectrum with a bandwidth = 5 pixel rate.
8. A parameter that is measured on every sensor during production testing.
9. A parameter that is quantified during the design verification activity.

KAF-0402-AAA-CP-B2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Image Sensors FULL FRAME CCD IMAGE SENSOR
Lifecycle:
New from this manufacturer.
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