IS31AP2036
Integrated Silicon Solution, Inc. – www.issi.com
Rev. D, 02/03/2016
5
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at IN+ and IN- pins -0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
125°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
-40°C ~ +85°C
Thermal resistance, junction to ambient,
JA
69°C/W
ESD (HBM)
ESD (CDM)
±8kV
±1kV
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS
T
A
= 25°C, V
CC
= 3.0V ~ 5.0V, unless otherwise noted. Typical value are T
A
= 25°C, V
CC
= 3.6V.
Symbol Parameter Condition Min. Typ. Max. Unit
V
CC
Supply voltage 3.0 5.0 V
I
CC
Quiescent current V
CC
= 3.6V, no load, no input 13 mA
I
SD
Shutdown current V
CC
= 3.6V, V
SDB
= 0V 1 µA
f
OSC
Clock frequency V
CC
= 3.0V ~ 5.0V 650 kHz
A
V
Output gain R
IN
= 3k 16.3 V/V
t
ON
Turn on time 40 ms
|V
OS
| Output offset voltage V
CC
= 3.0V ~ 5.0V, no input -50 0 50 mV
R
INT
Internal input resistor 16.5 k
V
IH
Input logic high voltage 1.3 V
CC
V
V
IL
Input logic low voltage 0 0.35 V
T
AGC
Thermal AGC threshold temperature (Note 1) 150 °C
T
AGC_HYS
Thermal AGC hysteresis temperature (Note 1) 20 °C
T
OTP
Over temperature protection (Note 1) 160 °C
T
TOP_HYS
Hysteresis temperature (Note 1) 30 °C
Charge Pump
PV
CC
Charge pump output voltage
V
CC
= 3.0V~3.8V 1.5V
CC
V
V
CC
>3.8V 5.8 V
f
CP
Charge pump frequency 1.05 MHz
t
ST
Soft start time C
OUT
= 4.7µF, no load 0.5 ms
I
L
PVCC short to GND limit current (Note 1) 350 mA
