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MMBT4401LT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11
1 Publication Order Number:
MMBT4401LT1/D
MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
60 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Collector Current − Peak I
CM
900 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2X M G
G
2X = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MMBT4401LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT4401LT1G
SMMBT4401LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
10,000 / Tape &
Reel
www.onsemi.com
MMBT4401L, SMMBT4401L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage (I
C
= 0.1 mAdc, I
E
= 0) V
(BR)CBO
60 − Vdc
Emitter−Base Breakdown Voltage (I
E
= 0.1 mAdc, I
C
= 0) V
(BR)EBO
6.0 − Vdc
Base Cutoff Current (V
CE
= 35 Vdc, V
EB
= 0.4 Vdc) I
BEV
− 0.1
mAdc
Collector Cutoff Current (V
CE
= 35 Vdc, V
EB
= 0.4 Vdc) I
CEX
− 0.1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
h
FE
20
40
80
100
40
−
−
−
300
−
−
Collector−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.4
0.75
Vdc
Base−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
−
0.95
1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz) f
T
250 − MHz
Collector−Base Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) C
cb
− 6.5 pF
Emitter−Base Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
eb
− 30 pF
Input Impedance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
ie
1.0 15
kW
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
re
0.1 8.0 X 10
−4
Small−Signal Current Gain (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
fe
40 500 −
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
oe
1.0 30
mmhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
EB
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 15
ns
Rise Time t
r
− 20
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V
< 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
C
S
* < 10 pF
-4.0 V
MMBT4401L, SMMBT4401L
www.onsemi.com
3
Figure 3. Charge Data
I
C
, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100
200
0.1
300 500
0.7
0.5
V
CC
= 30 V
I
C
/I
B
= 10
Figure 4. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 5. Rise and Fall Times
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
Q
T
Q
A
25°C 100°C
TRANSIENT CHARACTERISTICS
0.3
0.2
30
t
s
, STORAGE TIME (ns)
′
t, TIME (ns)
t, TIME (ns)t
f
, FALL TIME (ns)
70
100
10 20 50 70 100
200 300 500
30
I
C
/I
B
= 10
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
EB
= 2.0 V
t
d
@ V
EB
= 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100
200 300 500
30
V
CC
= 30 V
I
C
/I
B
= 10
t
r
t
f
10 20 50 70 100
200 300
500
30
100
200
30
70
50
300
10 20 50 70 100
200 300
500
30
t
s
′ = t
s
- 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
P1-P3P4-P6P7-P7

MMBT4401LT1G

Mfr. #:
Buy MMBT4401LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V NPN
Lifecycle:
New from this manufacturer.
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